Product Information

NX3020NAKW,115

NX3020NAKW,115 electronic component of Nexperia

Datasheet
N-Channel 30 V 180mA (Ta) 260mW (Ta), 1.1W (Tc) Surface Mount SOT-323
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0287 ea
Line Total: USD 86.1

37830 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
37830 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3020NAKW,115
Nexperia

3000 : USD 0.0287

776 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 10
Multiples : 10

Stock Image

NX3020NAKW,115
Nexperia

10 : USD 0.0664
100 : USD 0.0541
300 : USD 0.0481
3000 : USD 0.0433
6000 : USD 0.0397
9000 : USD 0.0379

79097 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

NX3020NAKW,115
Nexperia

1 : USD 0.2622
10 : USD 0.1817
100 : USD 0.0725
1000 : USD 0.0517
3000 : USD 0.0379
9000 : USD 0.0357
24000 : USD 0.0311
45000 : USD 0.0311
99000 : USD 0.0287

37830 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3020NAKW,115
Nexperia

3000 : USD 0.0369
9000 : USD 0.0355
24000 : USD 0.0348

20370 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3020NAKW,115
Nexperia

3000 : USD 0.0351
9000 : USD 0.0345

75660 - WHS 6


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 33000
Multiples : 3000

Stock Image

NX3020NAKW,115
Nexperia

33000 : USD 0.0309

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 180 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 SC-70 (SOT323) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKW SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 NX3020NAKW %3A 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C 1 - 180 mA D GS amb V = 10 V T = 100 C 1 - 110 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 720 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 300 mW NX3020NAKW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 October 2013 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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