X-On Electronics has gained recognition as a prominent supplier of PBSS5220PAPS bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. PBSS5220PAPS bipolar transistors - bjt are a product manufactured by Nexperia. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

PBSS5220PAPS Nexperia

PBSS5220PAPS electronic component of Nexperia
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Part No.PBSS5220PAPS
Manufacturer: Nexperia
Category:Bipolar Transistors - BJT
Description: TRANS, DUAL PNP, AECQ101, -20V, SOT1118D
Datasheet: PBSS5220PAPS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6662 ea
Line Total: USD 3.33

Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9582
10 : USD 0.7604
100 : USD 0.4774
500 : USD 0.3717
1000 : USD 0.2742

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif

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PBSS5220PAPS 20V, 2 A PNP/PNP low VCEsat (BISS) double transistor 14 December 2015 Product data sheet 1. General description PNP/PNP low V Breakthrough In Small Signal (BISS) double transistor in a leadless CEsat medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4220PANS 2. Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain h at high I FE C Reduced Printed-Circuit Board (PCB) requirements Exposed heat sink for excellent thermal and electrical conductivity High energy efficiency due to less heat generation Suitable for Automatic Optical Inspection (AOI) of solder joints AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits LED lighting Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter open base - - -20 V CEO voltage I collector current - - -2 A C I peak collector current single pulse t 1 ms - - -3 A CM p Scan or click this QR code to view the latest information for this productNXP Semiconductors PBSS5220PAPS 20V, 2 A PNP/PNP low VCEsat (BISS) double transistor Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter I = -0.7 A I = -7 mA pulsed - -145 -200 mV CEsat C B saturation voltage t 300 s 0.02 T = 25 C p amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 E1 emitter TR1 6 5 4 C1 B2 E2 2 B1 base TR1 TR2 7 8 3 C2 collector TR2 TR1 4 E2 emitter TR2 E1 B1 C2 1 2 3 5 B2 base TR2 sym138 Transparent top view 6 C1 collector TR1 DFN2020D-6 (SOT1118D) 7 C1 collector TR1 8 C2 collector TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS5220PAPS DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D small outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PBSS5220PAPS 3P PBSS5220PAPS All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 14 December 2015 2 / 17

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