X-On Electronics has gained recognition as a prominent supplier of PDTB113ZT,215 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. PDTB113ZT,215 Bipolar Transistors - Pre-Biased are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

PDTB113ZT,215 Nexperia

PDTB113ZT,215 electronic component of Nexperia
PDTB113ZT,215 Nexperia
PDTB113ZT,215 Bipolar Transistors - Pre-Biased
PDTB113ZT,215  Semiconductors

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See Product Specifications
Part No. PDTB113ZT,215
Manufacturer: Nexperia
Category: Bipolar Transistors - Pre-Biased
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 250mW; SOT23; R1: 1kO
Datasheet: PDTB113ZT,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12000: USD 0.0272 ea
Line Total: USD 326.4 
Availability - 14550
Ship by Tue. 20 May to Mon. 26 May
MOQ: 12000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2264
Ship by Fri. 16 May to Tue. 20 May
MOQ : 5
Multiples : 1
5 : USD 0.147
20 : USD 0.1235
50 : USD 0.1029
373 : USD 0.0529
1025 : USD 0.05

14550
Ship by Tue. 20 May to Mon. 26 May
MOQ : 12000
Multiples : 3000
12000 : USD 0.0272

17460
Ship by Tue. 20 May to Mon. 26 May
MOQ : 14286
Multiples : 1
14286 : USD 0.0345

5820
Ship by Tue. 20 May to Mon. 26 May
MOQ : 6000
Multiples : 3000
6000 : USD 0.046
12000 : USD 0.0302

23998
Ship by Tue. 20 May to Mon. 26 May
MOQ : 4890
Multiples : 1
4890 : USD 0.0558
9000 : USD 0.0435
24000 : USD 0.0353

96515
Ship by Tue. 20 May to Mon. 26 May
MOQ : 14286
Multiples : 1
14286 : USD 0.0345

422730
Ship by Tue. 20 May to Mon. 26 May
MOQ : 3929
Multiples : 1
3929 : USD 0.0695
4338 : USD 0.0629
6000 : USD 0.0609
12000 : USD 0.05
24000 : USD 0.0476
192000 : USD 0.0467
384000 : USD 0.0466

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
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Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PDTB113ZT,215 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDTB113ZT,215 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor R1 = 1 k, R2 = 10 k 15 January 2021 Product data sheet 1. General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD113ZT. 2. Features and benefits 500 mA output current capability Reduces pick and place costs Built-in bias resistors 10 % resistor ratio tolerance Simplifies circuit design Reduces component count AEC-Q101 qualified 3. Applications Digital application in automotive and industrial segments Cost-saving alternative for BC807 series in digital applications Control of IC inputs Switching loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -50 V CEO voltage I output current - - -500 mA O R1 bias resistor 1 T = 25 C 0.7 1 1.3 k amb R2/R1 bias resistor ratio 9 10 11 Nexperia PDTB113ZT PNP 500 mA, 50 V resistor-equipped transistor R1 = 1 k, R2 = 10 k 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 I input (base) O R1 2 GND ground (emitter) I 3 O output (collector) R2 GND 1 2 aaa-019606 SOT23 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PDTB113ZT SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 XK% PDTB113ZT 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -50 V CBO V collector-emitter voltage open base - -50 V CEO V emitter-base voltage open collector - -5 V EBO V input voltage positive - 5 V I negative - -10 V I output current - -500 mA O P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PDTB113ZT All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 15 January 2021 2 / 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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