Product Information

PESD12VV1BL

PESD12VV1BL electronic component of Nexperia

Datasheet
DIODE, ESD, BIDIR, 12V, 17PF, SOD882

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.516 ea
Line Total: USD 2.58

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 1

Stock Image

PESD12VV1BL
Nexperia

5 : USD 0.516
10 : USD 0.3389
100 : USD 0.1659
500 : USD 0.1384
1000 : USD 0.0834
5000 : USD 0.0772

     
Manufacturer
Product Category
Packaging
Operating Voltage
Power Dissipation Pd
Clamping Voltage Vc Max
Diode Case Style
No Of Pins
Svhc
Diode Type
Msl
LoadingGif

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PESD12VV1BL Very low capacitance bidirectional ESD protection diode Rev. 2 18 March 2013 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Bidirectional ESD protection of one line ESD protection up to 30 kV Low diode capacitance C =17pF IEC 61000-4-2 level 4 (ESD) d Rated peak pulse power: P = 290 W IEC 61000-4-5 (surge) I =7.8 A PPM PPM Ultra low leakage current I < 1 nA AEC-Q101 qualified RM 1.3 Applications Computers and peripherals Portable electronics Audio and video equipment Communication systems Cellular handsets and accessories 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage - - 12 V RWM C diode capacitance f = 1 MHz V = 0 V - 17 25 pF d R 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode 2 cathode 1 2 1 2 sym045 Transparent top viewPESD12VV1BL NXP Semiconductors Very low capacitance bidirectional ESD protection diode 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD12VV1BL DFN1006-2 leadless ultra small plastic package 2 terminals SOD882 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code PESD12VV1BL MW 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 P rated peak pulse power -290 W PPM 1 I rated peak pulse current t =8/20 s -7.8 A PPM p T junction temperature - 150 C j T ambient temperature 55 +150 C amb T storage temperature 65 +150 C stg 1 Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321). Table 6. ESD maximum ratings T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Max Unit 1 V electrostatic IEC 61000-4-2 -30 kV ESD discharge voltage (contact discharge) machine model - 400 V MIL-STD-883 -10 kV (human body model) 1 Device stressed with ten non-repetitive ESD pulses. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2 level 4 (ESD) > 15 kV (air) > 8 kV (contact) MIL-STD-883 class 3B (human body model) > 8 kV PESD12VV1BL All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 18 March 2013 2 of 12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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