PESD30VF1BLYL Nexperia

PESD30VF1BL Bidirectional ESD protection diode 8 April 2019 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits Bidirectional ESD protection of one line High reverse standoff voltage V = 30 V RWM Ultra-low diode capacitance C = 0.27 pF d Ultra small plastic package 1.0 x 0.6 x 0.48 mm ESD protection up to 12 kV IEC 61000-4-2 AEC-Q101 qualified 3. Applications NFC antenna protection Protection of high-speed data lines 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 30 V RWM amb voltage I rated peak pulse t = 8/20 s 1 - - 1 A PPM p current V clamping voltage I = 1 A T = 25 C 1 - 6.5 - V CL PPM amb 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) K1 K2 1 2 2 K2 cathode (diode 2) sym045 Transparent top view DFN1006-2 (SOD882)Nexperia PESD30VF1BL Bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD30VF1BL DFN1006-2 DFN1006-2: leadless ultra small plastic package 2 terminals SOD882 7. Marking Table 4. Marking codes Type number Marking code PESD30VF1BL L7 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I rated peak pulse current t = 8/20 s 1 - 1 A PPM p T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 contact discharge 2 - 12 kV ESD voltage 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Device stressed with ten non-repetitive ESD pulses. 001aaa630 I PP 120 100 % 100 % I 8 s PP 90 % I PP (%) 80 -t e 50 % I 20 s PP 40 10 % t t = 0.6 ns to 1 ns 0 r 0 10 20 30 40 30 ns t (s) 60 ns 001aaa631 Fig. 2. ESD pulse waveform according to IEC Fig. 1. 8/20 s pulse waveform according to 61000-4-2 IEC 61000-4-5 PESD30VF1BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 8 April 2019 2 / 10