Product Information

PESD3V3L2BT

PESD3V3L2BT electronic component of Nexperia

Datasheet
DIODE, TVS, 2UA, 3.3V, SOT-23

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.2572 ea
Line Total: USD 25.72

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 100
Multiples : 1

Stock Image

PESD3V3L2BT
Nexperia

100 : USD 0.2572
500 : USD 0.2279
1000 : USD 0.1694
5000 : USD 0.1546

     
Manufacturer
Product Category
Breakdown Voltage
Operating Voltage
Brand
Clamping Voltage Vc Max
Diode Case Style
No. Of Pins
Product Range
Svhc
Breakdown Voltage Max
Breakdown Voltage Min
Breakdown Voltage Range
Breakover Voltage Min
Capacitance Cd @ Vr Typ
Clamping Voltage @ 8/20 S Max
Diode Type
Operating Temperature Max
Operating Temperature Min
Operating Temperature Range
Peak Pulse Current Ippm
Peak Pulse Power Dissipation
Reverse Stand-Off Voltage Vrwm
Smd Marking
Stand-Off Voltage
Tvs Polarity
Termination Type
LoadingGif

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PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 02 25 August 2009 Product data sheet 1. Product prole 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features n ESD protection of two lines n Ultra low leakage current: I <90nA RM n Max. peak pulse power: P = 350 W n ESD protection up to 23 kV PP n Low clamping voltage: V =26V n IEC 61000-4-2, level 4 (ESD) CL n Small SMD plastic package n IEC 61000-4-5 (surge) I =15A PP 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Portable electronics n Cellular handsets and accessories n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage RWM PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V C diode capacitance V =0V d R f=1MHz PESD3V3L2BT - 101 - pF PESD5V0L2BT - 75 - pF PESD12VL2BT - 19 - pF PESD15VL2BT - 16 - pF PESD24VL2BT - 11 - pFPESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2. Pinning Pin Description Simplied outline Symbol 1 cathode 1 3 2 cathode 2 1 3 3 double cathode 2 12 006aaa155 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3L2BT - plastic surface mounted package 3 leads SOT23 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4. Marking Table 4. Marking codes 1 Type number Marking code PESD3V3L2BT V3* PESD5V0L2BT V4* PESD12VL2BT V5* PESD15VL2BT V6* PESD24VL2BT V7* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXL2BT SER 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 25 August 2009 2 of 14

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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