Product Information

PESD3V3L4BHCYL

PESD3V3L4BHCYL electronic component of Nexperia

Datasheet
ESD Suppressors TVS Diodes 4-fold bidirectional ESD protection array

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3795 ea
Line Total: USD 0.38

16385 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14823 - Warehouse 1


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

PESD3V3L4BHCYL
Nexperia

1 : USD 0.3795
10 : USD 0.2795
100 : USD 0.1852
500 : USD 0.1598
1000 : USD 0.1242
2500 : USD 0.1092
10000 : USD 0.1035
20000 : USD 0.1
50000 : USD 0.0978

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
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PESD3V3L4BHC 4-fold bidirectional ESD protection array 7 June 2019 Product data sheet 1. General description 4-fold bidirectional ElectroStatic Discharge (ESD) protection array designed to protect up to four lines from the damage caused by ESD and other transients. The device is housed in a leadless extremely thin small DFN1308-6 (SOT8006) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Bidirectional ESD protection of up to 4 lines Very high surge robustness I = 6 A for 8/20 s pulse PP Very low clamping voltage: V = 7.3 V typ. for 6 A 8/20 s pulse CL ESD protection up to 20 kV Very low dynamic resistance R = 0.2 (TLP) dyn 3. Applications ESD protection for low-speed lines in portable communication, consumer devices and computing devices. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 3.3 V RWM amb voltage I rated peak pulse t = 8/20 s T = 25 C 1 - - 6 A PPM p amb current V trigger voltage T = 25 C - 6.7 - V t1 amb 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5.Nexperia PESD3V3L4BHC 4-fold bidirectional ESD protection array 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode (diode 1) 1 2 3 K1 K4 2 CC common cathode CC CC 3 K2 cathode (diode 2) 6 5 4 K2 K3 4 K3 cathode (diode 3) DFN1308-6 (SOT8006) 5 CC common cathode aaa-030022 6 K4 cathode (diode 4) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3L4BHC DFN1308-6 DFN1308-6, plastic, leadless extremely thin small package 6 SOT8006 terminals body 1.3 x 0.8 x 0.38 mm 7. Marking Table 4. Marking codes Type number Marking code PESD3V3L4BHC L4 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) Symbol Parameter Conditions Min Max Unit I rated peak pulse current t = 8/20 s T = 25 C 1 - 6 A PPM p amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge IEC 61000-4-2 (contact discharge) 2 - 20 kV ESD voltage IEC 61000-4-2 (air discharge) 2 - 20 kV 1 Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5. 2 Device stressed with ten non-repetitive ESD pulses. PESD3V3L4BHC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 7 June 2019 2 / 11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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