Product Information

PESD5V0U2BM

PESD5V0U2BM electronic component of Nexperia

Datasheet
DIODE, AEC-Q101, 5V, SOT-883
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.6447 ea
Line Total: USD 3.22

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 5
Multiples : 1

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PESD5V0U2BM
Nexperia

5 : USD 0.6447
10 : USD 0.3001
100 : USD 0.1583
500 : USD 0.1315
1000 : USD 0.1041
5000 : USD 0.0984

Read More Specifications

     
Manufacturer
Product Category
Packaging
Operating Voltage
Clamping Voltage Vc Max
Diode Case Style
No Of Pins
Power Dissipation Pd
Product Range
Svhc
Msl
LoadingGif

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Additional Infomation About Product

PESD5V0U2BM Ultra low capacitance bidirectional double ESD protection array Rev. 01 14 August 2008 Product data sheet BOTTOM VIEW 1. Product prole 1.1 General description Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features n Bidirectional ESD protection of up to n ESD protection up to 10 kV two lines n Ultra low diode capacitance: C = 2.9 pF n IEC 61000-4-2 level 4 (ESD) d n Ultra low leakage current: I =5nA n AEC-Q101 qualied RM 1.3 Applications n Computers and peripherals n Portable electronics n Audio and video equipment n Subscriber Identity Module (SIM) card protection n Cellular handsets and accessories n FireWire n 10/100/1000 Mbit/s Ethernet n High-speed data lines n Communication systems 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specied. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage - - 5 V RWM C diode capacitance f = 1 MHz V = 0 V - 2.9 3.5 pF d RPESD5V0U2BM NXP Semiconductors Ultra low capacitance bidirectional double ESD protection array 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 cathode (diode 1) 1 2 cathode (diode 2) 1 3 3 2 3 common cathode 2 Transparent 006aab331 top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0U2BM SC-101 leadless ultra small plastic package 3 solder lands SOT883 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code PESD5V0U2BM GA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device T junction temperature - 150 C j T ambient temperature - 55 +150 C amb T storage temperature - 65 +150 C stg PESD5V0U2BM 1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 14 August 2008 2 of 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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