Product Information

PMBTA45

PMBTA45 electronic component of Nexperia

Datasheet
TRANSISTOR,NPN,500V,0.15A,SOT23
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.2525 ea
Line Total: USD 25.25

0 - Global Stock
MOQ: 100  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 100
Multiples : 1

Stock Image

PMBTA45
Nexperia

100 : USD 0.2552
500 : USD 0.1765
1500 : USD 0.173

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Gain Bandwidth Ft Typ
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PMBTA45 500 V, 150 mA NPN high-voltage low V (BISS) transistor CEsat Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low V Breakthrough In Small Signal (BISS) transistor in a CEsat SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage V CEsat High collector current capability I and I C CM High collector current gain (h ) at high I FE C AEC-Q101 qualified 1.3 Applications Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor management Flyback converters Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter peak V = 0 V - - 500 V CESM BE voltage V collector-emitter voltage open base - - 500 V CEO I collector current - - 0.15 A C h DC current gain V =10V I = 30 mA 50 100 - FE CE CPMBTA45 NXP Semiconductors 500 V, 150 mA NPN high-voltage low V (BISS) transistor CEsat 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBTA45 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMBTA45 LK* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PMBTA45 2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 10 March 2010 2 of 13

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