Product Information

PMCPB5530X,115

PMCPB5530X,115 electronic component of Nexperia

Datasheet
Mosfet Array N and P-Channel 20V 4A (Ta), 3.4A (Ta) 490mW Surface Mount 6-HUSON (2x2)
Manufacturer: Nexperia
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Price (USD)

1: USD 0.3301 ea
Line Total: USD 0.33

119175 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
161 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

PMCPB5530X,115
Nexperia

1 : USD 0.419
10 : USD 0.3646
30 : USD 0.3405
100 : USD 0.3122
500 : USD 0.2095
1000 : USD 0.2034

119175 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

PMCPB5530X,115
Nexperia

1 : USD 0.3301
10 : USD 0.2898
100 : USD 0.2277
500 : USD 0.1978
1000 : USD 0.176
3000 : USD 0.1656
9000 : USD 0.1656
24000 : USD 0.1622
45000 : USD 0.1564

2910 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 3000

Stock Image

PMCPB5530X,115
Nexperia

3000 : USD 0.1696
9000 : USD 0.1663

2415 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 42
Multiples : 1

Stock Image

PMCPB5530X,115
Nexperia

42 : USD 0.1974
100 : USD 0.185
250 : USD 0.1813

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I =3A T = 25 C - 26 34 m DSon GS D j resistance TR2 (P-channel), Static characteristics drain-source on-state V =-4.5V I =-3.4A T = 25 C - 55 70 m R DSon GS D j resistance TR1 (N-channel) V drain-source voltage T=25C --20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =4.5 V T =25C t 5 s --5.3 A D GS ambPMCPB5530X Nexperia 20 V, complementary Trench MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa261 Transparent top view 7D1 drain TR1 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCPB5530X DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMCPB5530X 1W 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T =25C - 20 V DS j V gate-source voltage -12 12 V GS PMCPB5530X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 26 June 2012 2 of 18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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