Product Information

PMCXB900UELZ

PMCXB900UELZ electronic component of Nexperia

Datasheet
MOSFET PMCXB900UEL/DFN1010B-6/REEL 7
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1005 ea
Line Total: USD 0.1

4753 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

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4753 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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PMCXB900UELZ
Nexperia

1 : USD 0.1005
10 : USD 0.0985
100 : USD 0.0985
1000 : USD 0.0985

4850 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5000
Multiples : 5000

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PMCXB900UELZ
Nexperia

5000 : USD 0.1075
10000 : USD 0.1054
25000 : USD 0.1054
50000 : USD 0.1054

2827 - WHS 3


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5

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PMCXB900UELZ
Nexperia

5 : USD 0.2588
50 : USD 0.2267
150 : USD 0.2129
500 : USD 0.1957
2500 : USD 0.1881
5000 : USD 0.1835

7460 - WHS 4


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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PMCXB900UELZ
Nexperia

1 : USD 0.3887
10 : USD 0.2967
100 : USD 0.1679
1000 : USD 0.1127
5000 : USD 0.1046
10000 : USD 0.1024
25000 : USD 0.1024
50000 : USD 0.0989

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Additional Infomation About Product

PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Trench MOSFET technology Very low threshold voltage for portable applications: V = 0.7 V GS(th) Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel) V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .Nexperia PMCXB900UEL 20 V, complementary N/P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCXB900UEL DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small SOT1216 outline package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMCXB900UEL B 110 PMCXB900UEL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 28 June 2016 2 / 21

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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