X-On Electronics has gained recognition as a prominent supplier of PMDXB550UNEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDXB550UNEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDXB550UNEZ Nexperia

PMDXB550UNEZ electronic component of Nexperia
PMDXB550UNEZ Nexperia
PMDXB550UNEZ MOSFETs
PMDXB550UNEZ  Semiconductors

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See Product Specifications
Part No. PMDXB550UNEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 30V Dual N-Channel Trench MOSFET
Datasheet: PMDXB550UNEZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4012 ea
Line Total: USD 0.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 0.1159
10000 : USD 0.1086
15000 : USD 0.1055
25000 : USD 0.1011
35000 : USD 0.0983
50000 : USD 0.0978

0
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 0.0592
10000 : USD 0.0581
15000 : USD 0.0576
20000 : USD 0.0572
25000 : USD 0.0559

0
Ship by Tue. 24 Jun to Mon. 30 Jun
MOQ : 10000
Multiples : 10000
10000 : USD 0.1149

0
Ship by Fri. 20 Jun to Tue. 24 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4012
10 : USD 0.3263
100 : USD 0.174
500 : USD 0.1452
1000 : USD 0.1177
2500 : USD 0.1089
5000 : USD 0.1001
10000 : USD 0.0935
25000 : USD 0.0924

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMDXB550UNEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDXB550UNEZ and other electronic components in the MOSFETs category and beyond.

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PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Exposed drain pad for excellent thermal conduction 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C 1 - - 590 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 590 mA T = 25 C - 550 670 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia PMDXB550UNE 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 1 6 7 2 G1 gate TR1 G1 3 D2 drain TR2 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDXB550UNE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMDXB550UNE 01 10 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMDXB550UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 25 March 2015 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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