PMEG6010AESBYL Nexperia

PMEG6010AESB 60 V, 1 A low VF MEGA Schottky barrier rectifier 1 September 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits Average forward current: I 1 A F(AV) Reverse voltage: V 60 V R Low forward voltage, typical: V = 525 mV F Low reverse current, typical: I = 185 A R Package height typ. 270 m 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 140 C - - 1 A F(AV) sp current square wave V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 1 A t 300 s 0.02 - 525 625 mV F F p T = 25 C j I reverse current V = 30 V t 3 ms 0.3 - 28 100 A R R p T = 25 C j V = 60 V t 3 ms 0.3 - 185 650 A R p T = 25 C jNexperia PMEG6010AESB 60 V, 1 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 1 2 2 A anode 1 2 sym001 Transparent top view DSN1006-2 (SOD993) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG6010AESB DSN1006-2 DSN1006-2, leadless ultra small package 2 terminals SOD993 body 1.0 x 0.6 x 0.27 mm 7. Marking Table 4. Marking codes Type number Marking code PMEG6010AESB 6A PMEG6010AESB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 1 September 2015 2 / 15