PMG85XP,115

PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C ---2 A D GS j Static characteristics R drain-source on-state V =-4.5V I =-2 A T =25C - 90 115 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMG85XP Nexperia 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain 6 5 D 4 2 D drain 3 G gate G 4S source S 132 5 D drain 017aaa094 SOT363 (TSSOP6) 6 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMG85XP TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code PMG85XP YA% 1 % = placeholder for manufacturing site code PMG85XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 28 June 2011 2 of 16