Product Information

PMGD280UN.115

PMGD280UN.115 electronic component of Nexperia

Datasheet
Transistor: N-MOSFET x2; unipolar; 20V; 0.55A; 400mW; SOT363
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.3731 ea
Line Total: USD 1.12

2762 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2762 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3
Multiples : 1

Stock Image

PMGD280UN.115
Nexperia

3 : USD 0.3731
25 : USD 0.2067
100 : USD 0.1859
110 : USD 0.1482
302 : USD 0.1404

Read More Specifications

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

's PMGD280UN.115 is a P-channel Power MOSFET (metal-oxide-semiconductor field-effect transistor) made by Nexperia. It has a rated drain-source voltage of 30V, current of 5.7A and a power dissipation of 9W. It is designed to be used in industrial, communications and computer applications. Its features include a high input impedance, low on-state resistance, low gate drive power and logic-level gate drive. It is also RoHS compliant and housed in a TO-252DF-2 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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