PMT280ENEAX Nexperia

PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 100 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 1.5 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 1.5 A T = 25 C - 285 385 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm .Nexperia PMT280ENEA 100 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 4 2 D drain 3 S source G 1 2 3 4 D drain SC-73 (SOT223) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMT280ENEA SC-73 plastic surface-mounted package with increased SOT223 heatsink 4 leads 7. Marking Table 4. Marking codes Type number Marking code PMT280ENEA 28ENEA PMT280ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 July 2016 2 / 16