Product Information

PMT280ENEAX

PMT280ENEAX electronic component of Nexperia

Datasheet
MOSFET PMT280ENEA/SC-73/REEL 7" Q1/T1
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2669 ea
Line Total: USD 0.27

511 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
511 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

PMT280ENEAX
Nexperia

1 : USD 0.2669
10 : USD 0.2479
25 : USD 0.2431
100 : USD 0.2096
250 : USD 0.2058
500 : USD 0.154

7 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

PMT280ENEAX
Nexperia

1 : USD 0.365
10 : USD 0.3056
30 : USD 0.2759
100 : USD 0.2471
500 : USD 0.219
1000 : USD 0.2098

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Technology
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 100 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 1.5 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 1.5 A T = 25 C - 285 385 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad 2 for drain 6 cm .Nexperia PMT280ENEA 100 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 4 2 D drain 3 S source G 1 2 3 4 D drain SC-73 (SOT223) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMT280ENEA SC-73 plastic surface-mounted package with increased SOT223 heatsink 4 leads 7. Marking Table 4. Marking codes Type number Marking code PMT280ENEA 28ENEA PMT280ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 July 2016 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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