PMV50UPE Nexperia

PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage 1.3 Applications Relay driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.7 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3.2 A T = 25 C - 50 66 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMV50UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV50UPE TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code 1 PMV50UPE %CZ 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -8 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -3.7 A D GS amb V = -4.5 V T = 25 C 1 - -3.2 A GS amb V = -4.5 V T = 100 C 1 - -2 A GS amb I peak drain current T = 25 C single pulse t 10 s - -12.8 A DM amb p P total power dissipation T = 25 C 2 - 500 mW tot amb PMV50UPE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 20 July 2012 2 / 14