PMV50UPE,215 Nexperia

PMV50UPE,215 electronic component of Nexperia
PMV50UPE,215 Nexperia
PMV50UPE,215 MOSFETs
PMV50UPE,215  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PMV50UPE,215 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV50UPE,215 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PMV50UPE,215
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 20 V 3.2A (Ta) 500mW (Ta) Surface Mount TO-236AB
Datasheet: PMV50UPE,215 Datasheet (PDF)
Price (USD)
1: USD 0.6238 ea
Line Total: USD 0.62 
Availability : 3542
  
Ship by Fri. 28 Nov to Tue. 02 Dec
QtyUnit Price
1$ 0.6238
10$ 0.3813
50$ 0.2652
100$ 0.2231
1000$ 0.1529
3000$ 0.1199
6000$ 0.11

Availability 3542
Ship by Fri. 28 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6238
10$ 0.3813
50$ 0.2652
100$ 0.2231
1000$ 0.1529
3000$ 0.1199
6000$ 0.11

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMV50UPE,215 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV50UPE,215 and other electronic components in the MOSFETs category and beyond.

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PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage 1.3 Applications Relay driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -3.7 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -3.2 A T = 25 C - 50 66 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV50UPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV50UPE TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code 1 PMV50UPE %CZ 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS j V gate-source voltage -8 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -3.7 A D GS amb V = -4.5 V T = 25 C 1 - -3.2 A GS amb V = -4.5 V T = 100 C 1 - -2 A GS amb I peak drain current T = 25 C single pulse t 10 s - -12.8 A DM amb p P total power dissipation T = 25 C 2 - 500 mW tot amb PMV50UPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 20 July 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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