Product Information

PMXB65ENEZ

PMXB65ENEZ electronic component of Nexperia

Datasheet
MOSFET 31 V, N-channel Trench MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6699 ea
Line Total: USD 0.67

4655 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8670 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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PMXB65ENEZ
Nexperia

1 : USD 0.4509
10 : USD 0.3595
100 : USD 0.2017
1000 : USD 0.1353
5000 : USD 0.1222
10000 : USD 0.1222
25000 : USD 0.121
50000 : USD 0.1175
100000 : USD 0.1163

     
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RoHS - XON
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Mxhts
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PMXB65ENE 30 V, N-channel Trench MOSFET 3 November 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 1.0 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1 kV Very low Drain-Source on-state resistance R = 44 m DSon 3. Applications Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V = 10 V T = 25 C - - 3.2 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 3.2 A T = 25 C - 44 67 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMXB65ENE 30 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2 S source 3 D drain 4 3 G 4 D drain 2 S Transparent top view 017aaa255 DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMXB65ENE DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline SOT1215 package no leads 3 terminals body 1.1 x 1.0 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code PMXB65ENE 00 10 00 READING DIRECTION MARKING CODE (EXAMPLE) YEAR DATE CODE VENDOR CODE PIN 1 MARK-FREE AREA INDICATION MARK READING EXAMPLE: 11 01 10 aaa-008041 Fig. 1. DFN1010D-3 (SOT1215) binary marking code description PMXB65ENE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 November 2016 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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