Product Information

PSMN014-40YS.115

Name: PSMN014-40YS.115
Brand: Nexperia
SKU: PSMN01440YS115_1_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

PSMN014-40YS.115 electronic component of Nexperia

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See Product Specifications
Datasheet

Transistor: N-MOSFET; unipolar; 40V; 46A; 56W; SOT669

Manufacturer: Nexperia

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3: USD 0.6112 ea
Line Total: USD 1.83

0 - Global Stock

MOQ: 3 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 3 Multiples : 1 PSMN014-40YS.115 Nexperia	3 : USD 0.7574 25 : USD 0.6524 36 : USD 0.462 98 : USD 0.434

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Additional Infomation About Product

The PSMN014-40YS.115 is a part of the Nexperia portfolio of devices. It is a N-Channel MOSFET, which is a Field Effect Transistor (FET) that employs an insulated gate to control the conductivity of a channel between its source and drain terminals. It has a maximum drain source voltage of 40V, a maximum drain current of 40A and a maximum gate threshold voltage of 4V. The package style is SOT-223.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFET MOSFET
Kind Of Package REEL , TAPE REEL , TAPE
Mounting Smd Smd
Polarisation Unipolar Unipolar
Case Sot669 Sot669
Type Of Transistor N - Mosfet N - Mosfet
Drain-Source Voltage 40 V 40 V
Drain Current 46 A 46 A
Gate-Source Voltage 20 V 20 V
On-State Resistance 27 mOhms 27 mOhms
Gate Charge 12 nC 12 nC
Power Dissipation 56 W 56 W