PSMN015-100B,118 Nexperia

PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Rated for avalanche ruggedness on-state resistance 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 300 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =75A -35 -nC GD GS D V =80V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A - 1215m DSon GS D on-state resistance T =25C j see Figure 9 and 10Nexperia PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN015-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k -100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -60.8 A D GS mb V =10V T =25C see Figure 1 and 3 -75 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -240 A DM p mb P total power dissipation T =25C see Figure 2 -300 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 75 A S mb I peak source current t 10 s pulsed T =25C - 240 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =36A V 50 V -320 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t = 0.11 ms R =50 p GS energy Nexperia B.V. 2017. All rights reserved PSMN015-100B 6 Product data sheet Rev. 06 17 December 2009 2 of 12