PSMN020-30MLCX

PSMN020-30MLC N-channel 30 V 18.1 m logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Load switching Synchronous buck regulator 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 1 - - 31.8 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 33 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 5 A T = 25 C - 20.5 27 m DSon GS D j resistance Fig. 10 V = 10 V I = 5 A T = 25 C Fig. 10 - 14.7 18.1 m GS D j Dynamic characteristics Q gate-drain charge V = 4.5 V I = 5 A V = 15 V - 1.7 - nC GD GS D DS Fig. 12 Fig. 13 Q total gate charge V = 4.5 V I = 5 A V = 15 V - 4.6 - nC G(tot) GS D DS Fig. 12 Fig. 13Nexperia PSMN020-30MLC N-channel 30 V 18.1 m logic level MOSFET in LFPAK33 using TrenchMOS Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN020-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) 4 SOT1210 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 31.8 A D GS mb V = 10 V T = 100 C Fig. 1 - 22.5 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 127 A DM p mb P total power dissipation T = 25 C Fig. 2 - 33 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 130 - V ESD Source-drain diode I source current T = 25 C - 27.4 A S mb I peak source current pulsed t 10 s T = 25 C - 127 A SM p mb PSMN020-30MLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 4 September 2012 2 / 13