PSMN1R7-30YL,115 Nexperia

PSMN1R7-30YL,115 electronic component of Nexperia
PSMN1R7-30YL,115 Nexperia
PSMN1R7-30YL,115 MOSFETs
PSMN1R7-30YL,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN1R7-30YL,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN1R7-30YL,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN1R7-30YL,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET <=30V N CH TRENCHFET
Datasheet: PSMN1R7-30YL,115 Datasheet (PDF)
Price (USD)
1: USD 2.35 ea
Line Total: USD 2.35 
Availability : 1420
  
Ship by Mon. 29 Sep to Wed. 01 Oct
QtyUnit Price
1$ 2.35
10$ 1.404
100$ 0.9702
500$ 0.8228
1000$ 0.77
1500$ 0.693
3000$ 0.6578
9000$ 0.649

Availability 1420
Ship by Mon. 29 Sep to Wed. 01 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.35
10$ 1.404
100$ 0.9702
500$ 0.8228
1000$ 0.77
1500$ 0.693
3000$ 0.6578
9000$ 0.649

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
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Transistor Type
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Hts Code
Mxhts
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN1R7-30YL,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R7-30YL,115 and other electronic components in the MOSFETs category and beyond.

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PSMN1R7-30YL N-channel 30 V 1.7 m logic level MOSFET in LFPAK Rev. 1 30 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power convertors density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current T =25C V =10V --100A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --109W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A --2.4 m DSon GS D resistance T =100 C see Figure 13 j V =10V I =15A -1.3 1.7 m GS D T =25C j Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -8.7 -nC GD GS D V = 12 V see Figure 14 DS see Figure 15PSMN1R7-30YL Nexperia N-channel 30 V 1.7 m logic level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 4.5 V I =10A -36.2-nC G(tot) GS D V = 12 V see Figure 14 DS Avalanche ruggedness E non-repetitive V =10V T =25C --241mJ DS(AL)S GS j(init) drain-source avalanche I = 100 A V 30 V D sup energy R =50 unclamped GS 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R7-30YL LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN1R7-30YL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 30 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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