PSMN2R0-30YLE,115 Nexperia

PSMN2R0-30YLE,115 electronic component of Nexperia
PSMN2R0-30YLE,115 Nexperia
PSMN2R0-30YLE,115 MOSFETs
PSMN2R0-30YLE,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN2R0-30YLE,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R0-30YLE,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN2R0-30YLE,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN2R0-30YLE,115 Datasheet (PDF)
Price (USD)
1: USD 1.1462 ea
Line Total: USD 1.15 
Availability : 16208
  
Ship by Thu. 23 Oct to Mon. 27 Oct
QtyUnit Price
1$ 1.1462
10$ 0.9876
100$ 0.8404
500$ 0.8228
1500$ 0.7931
3000$ 0.7931
9000$ 0.7744
24000$ 0.7623

Availability 16208
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1462
10$ 0.9876
100$ 0.8404
500$ 0.8228
1500$ 0.7931
3000$ 0.7931
9000$ 0.7744
24000$ 0.7623


Availability 1285
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.302
10$ 1.288

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R0-30YLE,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R0-30YLE,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 18 June 2021 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 100 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 238 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.7 2 m DSon GS D j resistance Fig. 12 V = 4.5 V I = 25 A T = 25 C - 3 3.5 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge I = 25 A V = 15 V V = 4.5 V - 13.8 - nC GD D DS GS Fig. 14 Fig. 15 Q total gate charge I = 25 A V = 15 V V = 10 V - 87 - nC G(tot) D DS GS Fig. 14 Fig. 15 Avalanche ruggedness E non-repetitive drain- I = 100 A V 30 V R = 50 - - 365 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 4Nexperia PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK Symbol Parameter Conditions Min Typ Max Unit Source-drain diode Q recovered charge I = 25 A dI /dt = 100 A/s V = 0 V - 49.8 - nC r S S GS V = 15 V DS 1 Capped at 100A due to package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb 2 S source D 3 S source G 4 G gate mb D mounting base connected 1 2 3 4 mbb076 S to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30YLE LFPAK56 plastic, single-ended surface-mounted package 4 SOT669 Power-SO8 terminals 7. Marking Table 4. Marking codes Type number Marking code 2R030 PSMN2R0-30YLE PSMN2R0-30YLE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 18 June 2021 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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