Product Information

PSMN2R0-30YLE,115

PSMN2R0-30YLE,115 electronic component of Nexperia

Datasheet
N-Channel 30 V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1296 ea
Line Total: USD 1.13

11619 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1166 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.0169
10 : USD 1.0102
25 : USD 1.0042
100 : USD 0.9539
250 : USD 0.9349
500 : USD 0.9349
1000 : USD 0.9349

11619 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1296
10 : USD 1.0026
100 : USD 0.9385
250 : USD 0.929
500 : USD 0.9207
1000 : USD 0.9196
1500 : USD 0.8555
3000 : USD 0.8555
9000 : USD 0.8401

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK 18 June 2021 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low Rdson for low conduction losses 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 100 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 238 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.7 2 m DSon GS D j resistance Fig. 12 V = 4.5 V I = 25 A T = 25 C - 3 3.5 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge I = 25 A V = 15 V V = 4.5 V - 13.8 - nC GD D DS GS Fig. 14 Fig. 15 Q total gate charge I = 25 A V = 15 V V = 10 V - 87 - nC G(tot) D DS GS Fig. 14 Fig. 15 Avalanche ruggedness E non-repetitive drain- I = 100 A V 30 V R = 50 - - 365 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energy Fig. 4Nexperia PSMN2R0-30YLE N-channel 30 V 2 m logic level MOSFET in LFPAK Symbol Parameter Conditions Min Typ Max Unit Source-drain diode Q recovered charge I = 25 A dI /dt = 100 A/s V = 0 V - 49.8 - nC r S S GS V = 15 V DS 1 Capped at 100A due to package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb 2 S source D 3 S source G 4 G gate mb D mounting base connected 1 2 3 4 mbb076 S to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R0-30YLE LFPAK56 plastic, single-ended surface-mounted package 4 SOT669 Power-SO8 terminals 7. Marking Table 4. Marking codes Type number Marking code 2R030 PSMN2R0-30YLE PSMN2R0-30YLE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 18 June 2021 2 / 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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