PSMN2R8-25MLC,115 Nexperia

PSMN2R8-25MLC,115 electronic component of Nexperia
PSMN2R8-25MLC,115 Nexperia
PSMN2R8-25MLC,115 MOSFETs
PSMN2R8-25MLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN2R8-25MLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN2R8-25MLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN2R8-25MLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-channel MOSFET logic level LFPAK33
Datasheet: PSMN2R8-25MLC,115 Datasheet (PDF)
Price (USD)
1: USD 1.1937 ea
Line Total: USD 1.19 
Availability : 0
  
QtyUnit Price
1$ 1.1937
10$ 0.7932
100$ 0.4928
500$ 0.4697
1000$ 0.4477
1500$ 0.3927
3000$ 0.3817
9000$ 0.3795
24000$ 0.3784

Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.4458


Availability 0
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1463
10$ 1.0046
100$ 0.7748
500$ 0.574


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1937
10$ 0.7932
100$ 0.4928
500$ 0.4697
1000$ 0.4477
1500$ 0.3927
3000$ 0.3817
9000$ 0.3795
24000$ 0.3784


Availability 0
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2158
5$ 1.091
20$ 0.8196
53$ 0.7748

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN2R8-25MLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN2R8-25MLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN2R8-25MLC N-channel 25 V 2.8 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T = 25C --25 V V DS j 1 drain current T =25C V =10V see Figure 1 --70 A I D mb GS total power dissipation T =25C see Figure 2 --88 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =4.5 V I =25A T =25C - 3.25 3.75 m R DSon GS D j resistance see Figure 10 V =10V I =25A T =25C - 2.45 2.8 m GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =25A V =12.5V -3.9 -nC GD GS D DS see Figure 12 see Figure 13 total gate charge V =4.5 V I =25A V =12.5V - 16.3 - nC Q G(tot) GS D DS see Figure 12 see Figure 13 1 Continuous current is limited by package.PSMN2R8-25MLC Nexperia N-channel 25 V 2.8 m logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN2R8-25MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) SOT1210 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25C - 25 V DS j V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C see Figure 1 -70 A D GS mb 1 V =10V T = 100 C see Figure 1 -70 A GS mb I peak drain current pulsed t 10 s T =25C - 536 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -88 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 350 - V ESD Source-drain diode 1 I source current T =25C -70 A S mb I peak source current pulsed t 10 s T = 25 C - 536 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =70A -77 mJ DS(AL)S GS j(init) D avalanche energy V 25 V R =50 unclamped sup GS see Figure 3 1 Continuous current is limited by package. PSMN2R8-25MLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 15 June 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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