Product Information

PSMN3R5-40YSDX

PSMN3R5-40YSDX electronic component of Nexperia

Datasheet
PSMN3R5-40YSD/SOT669/LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0151 ea
Line Total: USD 2.02

9058 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5191 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

PSMN3R5-40YSDX
Nexperia

1 : USD 1.1373
10 : USD 0.9292
100 : USD 0.7234
500 : USD 0.6129
1000 : USD 0.498
1500 : USD 0.4428
9000 : USD 0.3105

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN3R5-40YSD N-channel 40 V, 3.5 m, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 2 October 2018 Product data sheet 1. General description 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits 120 A capability Avalanche rated, 100% tested at I = 120 A (AS) NextPower-S3 technology delivers superfast switching with soft recovery Low Q , Q and Q for high system efficiency and low EMI designs RR G GD Schottky-Plus body-diode, gives soft switching without the associated high I leakage DSS Low V Schottky-like body-diode SD Tighter V limits for improved paralleling GS(th) Wide Safe Operating Area (SOA) for reliable linear mode operation High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 175 C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints 3. Applications Synchronous rectification DC-to-DC converters High performance and high efficiency power supplies BLDC motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 115 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 3 3.5 m DSon GS D j resistance Fig. 10 Dynamic characteristicsNexperia PSMN3R5-40YSD N-channel 40 V, 3.5 m, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge I = 25 A V = 20 V V = 10 V - 31 44 nC G(tot) D DS GS Fig. 12 Fig. 13 Q gate-drain charge - 5 10 nC GD 1 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S 1 2 3 4 mb D mounting base connected to drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R5-40YSD LFPAK56 plastic, single-ended surface-mounted package 4 terminals SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN3R5-40YSD 3D5S40Y 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V peak drain-source t 20 ns f 500 kHz E 200 nJ - 45 V DSM p DS(AL) voltage pulsed V drain-gate voltage 25 C T 175 C R = 20 k - 40 V DGR j GS V gate-source voltage T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 115 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 100 C Fig. 2 - 93 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 526 A DM p mb PSMN3R5-40YSD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 2 October 2018 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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