PSMN4R1-30YLC,115 Nexperia

PSMN4R1-30YLC N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 12 February 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8 package, qualified to 175C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applications DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 1 - - 92 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 67 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 20 A T = 25 C - 4.75 5.7 m DSon GS D j resistance Fig. 12 V = 10 V I = 20 A T = 25 C - 3.65 4.35 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 20 A V = 15 V - 3.5 - nC GD GS D DS Fig. 14 Fig. 15Nexperia PSMN4R1-30YLC N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 4.5 V I = 20 A V = 15 V - 11 - nC G(tot) GS D DS Fig. 14 Fig. 15 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 S source 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R1-30YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN4R1-30YLC 4C130L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 92 A D GS mb V = 10 V T = 100 C Fig. 1 - 65 A GS mb PSMN4R1-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 12 February 2013 2 / 14