X-On Electronics has gained recognition as a prominent supplier of PSMN5R8-40YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN5R8-40YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN5R8-40YS,115 Nexperia

PSMN5R8-40YS,115 electronic component of Nexperia
PSMN5R8-40YS,115 Nexperia
PSMN5R8-40YS,115 MOSFETs
PSMN5R8-40YS,115  Semiconductors

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See Product Specifications
Part No. PSMN5R8-40YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CHAN 40V 64A
Datasheet: PSMN5R8-40YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2362 ea
Line Total: USD 1.24 
Availability - 29283
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1113
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 442
Multiples : 1
442 : USD 0.5884
448 : USD 0.5812
500 : USD 0.556
1000 : USD 0.5172

29283
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 1.2362
10 : USD 0.8484
25 : USD 0.8232
100 : USD 0.5269
250 : USD 0.5214
500 : USD 0.5016
1000 : USD 0.4873
1500 : USD 0.4752
3000 : USD 0.4686

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN5R8-40YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN5R8-40YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN5R8-40YS N-channel LFPAK 40 V 5.7 m standard level MOSFET Rev. 03 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC convertors Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --40 V DS j j I drain current T =25C V =10V --90 A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --89 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A --7.7 m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =15A -4.4 5.7 m GS D T =25C see Figure 13 jPSMN5R8-40YS Nexperia N-channel LFPAK 40 V 5.7 m standard level MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10V I =75A -7.8 -nC GD GS D V =20 V see Figure 14 DS Q total gate charge - 28.8 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --65 mJ DS(AL)S GS j(init) drain-source avalanche I =90A V 40 V D sup energy unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R8-40YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN5R8-40YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 25 October 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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