PSMNR90-30BL,118 Nexperia

PSMNR90-30BL,118 electronic component of Nexperia
PSMNR90-30BL,118 Nexperia
PSMNR90-30BL,118 MOSFETs
PSMNR90-30BL,118  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMNR90-30BL,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMNR90-30BL,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMNR90-30BL,118
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Std N-chanMOSFET
Datasheet: PSMNR90-30BL,118 Datasheet (PDF)
Price (USD)
1: USD 3.8 ea
Line Total: USD 3.8 
Availability : 0
  
QtyUnit Price
1$ 3.8
10$ 2.668
100$ 2.057
500$ 1.936
800$ 1.606

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 4800
Multiples : 800
QtyUnit Price
4800$ 2.7025
8000$ 2.675
12000$ 2.6488
20000$ 2.6212
24000$ 2.595
28000$ 2.57
40000$ 2.5438
100000$ 2.5187
200000$ 2.4937
500000$ 2.4688


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.6221
10$ 6.5907
100$ 5.4003


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.6221
10$ 6.5907
100$ 5.4003


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 4.7675
1600$ 3.8771
2400$ 3.6833


Availability 0
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.8
10$ 2.668
100$ 2.057
500$ 1.936
800$ 1.606


Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 800
Multiples : 800
QtyUnit Price
800$ 1.8334

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMNR90-30BL,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMNR90-30BL,118 and other electronic components in the MOSFETs category and beyond.

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PSMNR90-30BL N-channel 30 V 1.0 m logic level MOSFET in D2PAK 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T = 25 C V = 10 V Fig. 2 1 - - 120 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 306 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 0.89 1 m DSon GS D j resistance Fig. 12 V = 10 V I = 25 A T = 100 C - 1.19 1.5 m GS D j Fig. 13 Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 75 A V = 15 V - 37 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 118 - nC G(tot)Nexperia PSMNR90-30BL N-channel 30 V 1.0 m logic level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 120 A - - 1.9 J DS(AL)S GS j(init) D source avalanche V 30 V R = 50 unclamped sup GS energy 1 Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMNR90-30BL D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMNR90-30BL PSMNR90-30BL 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 30 V DGR j j GS PSMNR90-30BL All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 2 April 2014 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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