Product Information

P06P03LDG

P06P03LDG electronic component of NIKO

Datasheet
MOSFET P Trench 30V 12A (Tc) 3V @ 250uA 75 mΩ @ 10A,4.5V TO-252-2 (DPAK) RoHS

Manufacturer: NIKO
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3275 ea
Line Total: USD 0.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.3275
10 : USD 0.272
30 : USD 0.2318
100 : USD 0.1986
500 : USD 0.1929
1000 : USD 0.1901

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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-SemiconductorsThe P06P03LDG with MOSFET P Trench 30V 12A (Tc) 3V @ 250uA 75 m? @ 10A, 4.5V TO-252-2 (DPAK) RoHS is a power MOSFET manufactured by NIKO-Semiconductors. It has a maximum drain-source voltage of 30V and a maximum continuous drain current of 12A. It has a low 4.5V threshold voltage and a low thermal resistance of 3V @ 250µA. It also features 75m? on-state drain-source resistance at 10A. The package for this device is a TO-252-2 DPAK, making it RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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