Product Information

NJG1105F-TE1

NJG1105F-TE1 electronic component of Nisshinbo

Datasheet
RF Amplifier 1.8/1.9/2.1GHZ LwNs

Manufacturer: Nisshinbo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - WHS 1


Multiples : 1

Stock Image

NJG1105F-TE1
Nisshinbo

N/A

0 - WHS 2


Multiples : 1

Stock Image

NJG1105F-TE1
Nisshinbo

N/A

0 - WHS 3


Multiples : 1

Stock Image

NJG1105F-TE1
Nisshinbo

N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
Gain
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Factory Pack Quantity :
Tradename
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
NJG1117HA8 electronic component of Nisshinbo NJG1117HA8

NJR RF Amplifier GPS Low Noise Amp GaAs MMIC
Stock : 0

NJG1152KA1-TE1 electronic component of Nisshinbo NJG1152KA1-TE1

RF Amplifier Wide Band LN Amp GaAs MMIC 20mA
Stock : 0

NJG1155UX2-TE1 electronic component of Nisshinbo NJG1155UX2-TE1

NJR RF Amplifier Ultra Low Pwr Op Amp GNSS 2.8V 1.8V
Stock : 0

NJG1156PCD-TE1 electronic component of Nisshinbo NJG1156PCD-TE1

RF Front End GPS Front-End Mod 1.8V 2.8V 0.1uA
Stock : 0

NJG1157PCD-TE1 electronic component of Nisshinbo NJG1157PCD-TE1

RF Front End Ultra Low Pwr Op Amp GNSS 1.5 to 3.3V
Stock : 0

NJG1159PHH-TE1 electronic component of Nisshinbo NJG1159PHH-TE1

RF Front End GPS Front-End Mod 1.8V 2.8V 0.1uA
Stock : 0

NJG1302V-TE1 electronic component of Nisshinbo NJG1302V-TE1

RF Amplifier Medium Power
Stock : 0

NJG1135MD7 PCB electronic component of Nisshinbo NJG1135MD7 PCB

NJG1135MD7 PCB
Stock : 0

NJG1130KA1-TE1 electronic component of Nisshinbo NJG1130KA1-TE1

RF Amplifier GNSS Low Noise Amp GaAs MMIC
Stock : 0

NJG1143UA2-TE1 electronic component of Nisshinbo NJG1143UA2-TE1

RF Amplifier Low Noise Amp GaAs MMIC 1.5V to 3.6V
Stock : 0

Image Description
NJG1155UX2-TE1 electronic component of Nisshinbo NJG1155UX2-TE1

NJR RF Amplifier Ultra Low Pwr Op Amp GNSS 2.8V 1.8V
Stock : 0

NJG1302V-TE1 electronic component of Nisshinbo NJG1302V-TE1

RF Amplifier Medium Power
Stock : 0

NJG1307R-TE1 electronic component of Nisshinbo NJG1307R-TE1

RF Amplifier Driver Amp Variable Gain
Stock : 0

CHA3665-QAG electronic component of United Monolithic Semiconductors CHA3665-QAG

CHA3665QAG united monolithic amplifier rf integrated circuits ics semiconductors
Stock : 0

CHA4220-QGG electronic component of United Monolithic Semiconductors CHA4220-QGG

RF & MW DRIVER AMPLIFIER
Stock : 0

SST12CP11C-QUCE electronic component of Microchip SST12CP11C-QUCE

Microchip Technology RF Amplifier WLAN 11bgn 256QAM PA
Stock : 0

SST12LP07-QVCE-MM007 electronic component of Microchip SST12LP07-QVCE-MM007

RF Amplifier 2.4-2.5GHz 3.3V 250mA ICC 802.11 b/g
Stock : 0

SST12LP14A-QVCE electronic component of Microchip SST12LP14A-QVCE

Microchip Technology RF Amplifier 2.4-2.5GHz 3.3V 210mA ICC 802.11 bg
Stock : 0

SST12LP14C-QVCE electronic component of Microchip SST12LP14C-QVCE

Microchip Technology RF Amplifier 2.4-2.5GHz 3.3V 205mA ICC 802.11 bg
Stock : 0

SST12LP14E-QX8E electronic component of Microchip SST12LP14E-QX8E

Microchip Technology RF Amplifier 2.4-2.5GHz 3.3V 205mA ICC 802.11 bg
Stock : 0

NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION nPACKAGE OUTLINE NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. NJG1105F nFEATURES lLow voltage operation +2.8V typ. lLow current consumption 7mA typ. lHigh small signal gain 19dB typ. f=1860MHz 18dB typ. f=1960MHz 15dB typ. f=2140MHz lLow Noise Figure 1.7dB typ. f=1860/1960/2140MHz lHigh Input IP3 -3dBm typ. f=1860.0+1860.1MHz -3dBm typ. f=1960.0+1960.1MHz +1dBm typ. f=2140.0+2140.1MHz lPackage MTP6 (Mount Size: 2.8x2.9x1.2mm) nPIN CONFIGURATION (Top View) 4 3 Pin connection 1.VDD 2.GND 5 2 3.RF OUT 4.RF IN 5.GND 6.EXTCAP 6 1 Orientation Mark Note: Specifications and description listed in this catalog are subject to change without prior notice. - 1 -NJG1105F nABSOLUTE MAXIMUM RATINGS (T =+25C, Z =Z =50) a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V 6.5 V DD Input Power Pin V =2.8V +15 dBm DD Power Dissipation P 150 mW D Operating Temp. T -40~+85 C opr Storage Temp. T -55~+125 C stg nELECTRICAL CHARACTERISTICS 1 (1.8GHz Band) (V =2.8V, f=1860MHz, T =+25C, Z =Z =50, with application circuit) DD a s l PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 1840 1860 1870 MHz Drain Voltage V 2.7 2.8 5.5 V DD Operating Current I RF OFF - 7.0 8.5 mA DD Small Signal Gain Gain 17.0 19.0 21.0 dB Gain Flatness G f=1840~1870MHz - 0.5 1.0 dB flat Noise Figure NF - 1.7 2.0 dB Pout at 1dB Gain P +1.0 +5.0 - dBm -1dB Compression point Input 3rd Order f=1860.0+1860.1MHz, IIP3 -7.0 -3.0 - dBm Intercept Point Pin=-35dBm LNAIN Port VSWR VSWR - 1.5 2.0 i LNAOUT Port VSWR VSWR - 1.5 2.0 o IN/OUT terminal: open or Spurious: -60dBm max. Stability short, No RF input, No return gain T =20~80C, freq<20GHz a nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band) (V =2.8V, f=1960MHz, T =+25C, Z =Z =50, with application circuit) DD a s l PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 1930 1960 1990 MHz Drain Voltage V 2.7 2.8 5.5 V DD Operating Current I RF OFF - 7.0 8.5 mA DD Small Signal Gain Gain 16.0 18.0 20.0 dB Gain Flatness G f=1930~1990MHz - 0.5 1.0 dB flat Noise Figure NF - 1.7 2.0 dB Pout at 1dB Gain P +1.0 +4.0 - dBm -1dB Compression point Input 3rd Order f=1960.0+1960.1MHz, IIP3 -7.0 -3.0 - dBm Intercept Point Pin=-35dBm LNAIN Port VSWR VSWR - 1.5 2.0 i LNAOUT Port VSWR VSWR - 1.5 2.0 o IN/OUT terminal: open or Spurious: -60dBm max. Stability short, No RF input, No return gain T =20~80C, freq<20GHz a - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
NEW JAPAN RADIO
NJR
NJR Corporation/NJRC
Ricoh
Ricoh Elec Devices
Ricoh Electronic Devices Company

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted