Product Information

NJG1152KA1-TE1

NJG1152KA1-TE1 electronic component of Nisshinbo

Datasheet
RF Amplifier Wide Band LN Amp GaAs MMIC 20mA

Manufacturer: Nisshinbo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.6365 ea
Line Total: USD 2.64

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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NJG1152KA1-TE1
Nisshinbo

1 : USD 2.6365
10 : USD 0.9618
100 : USD 0.708
250 : USD 0.6575
500 : USD 0.5598
1000 : USD 0.4477
2500 : USD 0.4062
4000 : USD 0.3814
8000 : USD 0.368

     
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NJG1152KA1 Wide Band Low Noise Amplifier GaAs MMIC GENERAL DESCRIPTION PACKAGE OUTLINE The NJG1152KA1 is a fully matched wide band low noise amplifier GaAs MMIC for terrestrial application. To achieve wide dynamic range, the NJG1152KA1 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG1152KA1 helps improve receiver sensitivity through high gain and low noise figure. NJG1152KA1 Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. An small and ultra-thin package of FLP6-A1 is adopted. APPLICATIONS Terrestrial application like Digital TV, Set-top box FEATURES Operating frequency 40 to 900MHz Package size FLP6-A1 (Package size: 1.6x1.6x0.55mm typ.) LNA mode, 50 : Operating voltage 3.3V Operating current 20mA typ. Small signal gain 18.0dB typ. Noise figure 1.2dB typ. f=40 to 150MHz 0.9dB typ. f=150 to 900MHz Bypass mode, 50 : Operating voltage 0V Insertion loss 1.0dB typ. 2nd order intermodulation distortion 75dB typ. 3rd order intermodulation distortion 85dB typ. PIN CONFIGURATION (Top View) Pin connection 1. RFOUT1 4 3 2. GND RFIN RFOUT2 3. RFOUT2 5 2 4. RFIN Bias Circuit GND GND 5. GND 6. VCTL Logic 6 1 Circuit VCTL RFOUT1 1pin Index TRUTH TABLE H =V L =V CTL(H) CTL(L) V LNA Bypass Mode select CTL H ON OFF LNA mode L OFF ON Bypass mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2018-03-14 - 1 - NJG1152KA1 ABSOLUTE MAXIMUM RATINGS T =+25C, Z =Z =50 a s l PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain voltage V 5.0 V DD Control voltage V 5.0 V CTL Input power P V =3.3V +10 dBm IN DD 4-layer FR4 PCB with through-hole Power dissipation P 580 mW D (74.2x74.2mm), T =150C j Operating temperature T -40 to +85 C opr Storage temperature T -55 to +150 C stg ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) V =3.3V, T =+25C, with application circuit DD a PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V 2.3 3.3 3.6 V DD Control voltage (High) V 1.3 1.8 3.6 V CTL(H) Control voltage (Low) V 0.0 0.0 0.5 V CTL(L) Operating current1 I 1 RF OFF, V =1.8V - 20 45 mA DD CTL Operating current2 I 2 RF OFF, V =0V - 17 35 A DD CTL Control current I RF OFF, V =1.8V - 6 20 A CTL CTL - 2 -

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
NEW JAPAN RADIO
NJR
NJR Corporation/NJRC
Ricoh
Ricoh Elec Devices
Ricoh Electronic Devices Company

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