2N4398 & 2N4399 Silicon PNP Transistor High Power Description: The 2N4398 and 2N4399 are silicon PNP high power transistors in a TO3 type package designed for use in power amplifier and switching circuits. Features: Low Collector Emitter Saturation Voltage: I = 15A, V = 1.0V Max C CE(sat) DC Current Gain Specified: 1.0 o 30A Absolute Maximum Ratings: Collector Emitter Voltage, V CEO 2N4398 ..................................................................... 40V 2N4399 ..................................................................... 60V Collector Base Voltage, V CB 2N4398 ..................................................................... 40V 2N4399 ..................................................................... 60V EmitterBase Voltage, V ......................................................... 5.0V EB Collector Current, I C Continuous .................................................................. 30A Peak ....................................................................... 50A Base Current, I B Continuous ................................................................. 7.5A Peak ....................................................................... 15A Total Power Dissipation, P D T = +25C .................................................................. 5W A Derate Above +25C.................................................. 28.8W/C T = +25C ................................................................ 200W C Derate Above +25C.................................................. 1.15W/C Operating Junction Temperature Range, T .................................. 65 to +200C j Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R ................................... 0.875C/W thJC Thermal Resistance, Junction toAmbient, R .................................... 35C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics CollectorEmitter Sustaining Voltage 2N4398 V I = 200mA, I = 0, Note 1 40 V CEO(SUS) C B 2N4399 60 V Collector Cutoff Current I V = Rated Value, V = 1.5V 5 mA CEO CE BE(OFF) I V = 30V, 5 mA CEX CE V = 1.5V BE(OFF) T = +150C 10 mA C I V = Rated Value, I = 0 1 mA CBO CE E Emitter Cutoff Current I V = 5V, I = 0 5 mA EBO EB c Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit On Characteristics (Note 1) DC Current Gain h V = 2V I = 1A 40 FE CE C I = 15A 15 60 C I = 30A 5 C CollectorEmitter Saturation Voltage V I = 10A, I = 1A 0.75 V CE(sat) C B I = 15A, I = 1.5A 1.0 V C B I = 20A, I = 2A 2.0 V C B I = 30A, I = 6A 4.0 V C B BaseEmitter Saturation Voltage V I = 10A, I = 1A 1.6 V BE(sat) C B I = 15A, I = 1.5A 1.85 V C B I = 20A, I = 2A 2.5 V C B BaseEmitter ON Voltage V I = 15A, V = 2V 1.7 V BE(on) C CE I = 30A, V = 4V 3.0 V C CE Dynamic Characteristics Current Gain Bandwidth Product f I = 1A, V = 10V, f = 1MHz 4 MHz T C CE SmallSignal Current Gain h I = 1A, V = 10V, f = 1MHz 40 fe C CE Switching Characteristics Rise Time t V = 30V, I = 10A, I = I = 1A 0.4 us r CC C B1 B2 Storage Time t 1.5 us s Fall Time t 0.6 us f Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Collector/Case Base