2N4400 NTE

2N4400 & 2N4401 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V ...................................................... 40V CEO Collector Base Voltage, V ....................................................... 60V CBO EmitterBase Voltage, V .......................................................... 6V EBO Continuous Collector Current, I .................................................. 600mA C Total Device Dissipation (T = +25 C), P ......................................... 625mW A D Derate Above 25 C ..................................................... 5.0mW/ C Total Device Dissipation (T = +25 C), P ............................................ 1.5W C D Derate Above 25 C ...................................................... 12mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction to Case, R ..................................... 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R ................................... 200 C/W thJA Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 60 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 35V, V = 0.4V 0.1 A CEX CE EB Base Cutoff Current I V = 35V, V = 0.4V 0.1 A BEV CE EB ON Characteristics (Note 1) DC Current Gain h FE 2N4401 V = 1V, I = 0.1mA 20 CE C 2N4400 V = 1V, I = 1mA 20 CE C 2N4401 40 2N4400 V = 1V, I = 10mA 40 CE C 2N4401 80 2N4400 V = 1V, I = 150mA 50 150 CE C 2N4401 100 300 2N4400 V = 2V, I = 500mA 20 CE C 2N4401 40 Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Contd) (Note 1) CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 500mA, I = 50mA 0.75 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 0.75 0.95 V BE(sat) C B I = 500mA, I = 50mA 1.2 V C B SmallSignal Characteristics Current GainBandwidth Product f T 2N4400 I = 20mA, V = 10V, f = 100MHz 200 MHz C CE 2N4401 250 MHz CollectorBase Capacitance C V = 5V, I = 0, f = 100kHz 6.5 pF cb CB E EmitterBase Capacitance C V = 0.5V, I = 0, f = 100kHz 30 pF eb BE C Input Impedance h ie 2N4400 I = 1mA, V = 10V, f = 1kHz 0.5 7.5 k C CE 2N4401 1.0 15 k 4 Voltage Feedback Ratio h I = 1mA, V = 10V, f = 1kHz 0.1 8.0 x 10 re C CE SmallSignal Current Gain h fe 2N4400 I = 1mA, V = 10V, f = 1kHz 20 250 C CE 2N4401 40 500 Output Admittance h I = 1mA, V = 10V, f = 1kHz 1.0 30 mhos oe C CE Switching Characteristics Delay Time t 15 ns V = 30V, V = 2V, I = 150mA, d CC EB C I = 15mA B1 Rise Time t 20 ns r Storage Time t V = 30V, I = 150mA, 225 ns s CC C I = I = 15mA B1 B2 Fall Time t 30 ns f Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.