2N5210 NTE

NTE123AP Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159) Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/ C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W C D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3 C/W thJC Thermal Resistance, Junction to Ambient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 60 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 35V, V = 0.4V 0.1 A CEV CE EB(off) Base Cutoff Current I V = 35V, V = 0.4V 0.1 A BEV CE EB(off) ON Characteristics (Note 1) DC Current Gain h V = 1V, I = 0.1mA 20 FE CE C V = 1V, I = 1mA 40 CE C V = 1V, I = 10mA 80 CE C V = 1V, I = 150mA 100 300 CE C V = 1V, I = 500mA 40 CE C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) (Contd) CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 500mA, I = 50mA 0.75 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 0.75 0.95 V BE(sat) C B I = 500mA, I = 50mA 1.2 V C B SmallSignal Characteristics Current GainBandwidth Product f I = 20mA, V = 10V, f = 100MHz 250 MHz T C CE CollectorBase Capacitance C V = 5V, I = 0, f = 100kHz 6.5 pF cb CB E EmitterBase Capacitance C V = 0.5V, I = 0, f = 100kHz 30 pF eb CB C Input Impedance h I = 1mA, V = 10V, f = 1kHz 1.0 15 k ie C CE 6 Voltage Feedback Ratio h I = 1mA, V = 10V, f = 1kHz 0.1 8.0 x 10 re C CE SmallSignal Current Gain h I = 1mA, V = 10V, f = 1kHz 40 500 fe C CE Output Admittance h I = 1mA, V = 10V, f = 1kHz 1.0 30 mhos oe C CE Switching Characteristics Delay Time t V = 30V, V = 2V, 15 ns d CC EB(()off) II = 150mA, I 150mA I = 15mA15mA C B1 Rise Time t 20 ns r Storage Time t V = 30V, I = 150mA, 225 ns s CC C II = I I = 15mA 15mA B1 B2 Fall Time t 30 ns f Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.