NTE2993 NTE

NTE2993 MOSFET NChannel, Enhancement Mode High Speed Switch TO3 Type Package D Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating G Simple Drive Requirements Ease of Paralleling S Absolute Maximum Ratings: DrainSource Voltage (V = 0V, I = 1mA), V ..................................... 400V GS D DSS GateSource Voltage, V ......................................................... 20V GS Continuous Drain Current (V = 10V), I GS D T = +25 C .................................................................. 14A C T = +100 C .................................................................. 9A C Pulsed Drain Current (Note 1), I ................................................... 56A DM Maximum Power Dissipation (T = +25 C), P ....................................... 150W C D Linear Derating Factor .................................................... 1.2W/ C Single Pulse Avalanche Energy (Note 2), E ....................................... 11.3mJ AS Avalanche Current (Note 1), I ...................................................... 14A AR Repetitive Avalanche Energy (Note 1), E .......................................... 15mJ AR Peak Diode Recovery (Note 3), dv/dt .............................................. 4.0V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead temperature (During Soldering, .063 (1.6mm) from case, 10sec max), T ......... +300 C L Thermal Resistance, Junction toAmbient (Typical Socket Mount), R ............... 30K/W thJA Thermal Resistance, Junction toCase, R ..................................... 0.83K/W thJC Note 1. Repetitive Rating Pulse width limited by maximum junction temperature. Note 2. V = 50V, Starting T = +150 C, Peak I = 14A. DD J L Note 3. I 14A, di/dt 145A/ s, V 400V, T +150 C. SD DD J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 1mA, V = 0V 400 V (BR)DSS D GS Temperature Coefficient of Reference to +25 C, I = 1mA 0.46 V/ C V (BR)DSS D Breakdown Voltage T J Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Zero Gate Voltage Drain Current I V = 320 25 A DSS DS V = 0V, T = 125 C 250 A GS J OnState Drain Current I V > I x R max, V = 10V 15 A D(on) DS D(on) DS(on) GS GateSource Leakage Forward I V = 20V 100 nA GSS GS GateSource Leakage Reverse I V = 20V 100 nA GSS GS DrainSource OnState Resistance R V = 10V, I = 9A , Note 4 0.3 DS(on) GS D V = 10V, I = 14A, Note 4 0.4 GS D Forward Transconductance g I = 3A, V = 10V, Note 4 6.0 S fs D DS Input Capacitance C V = 0V, V = 25V, f = 1.0 MHz 2600 pF iss GS DS Output Capacitance C 680 pF oss Reverse Transfer Capacitance C 250 pF rss TurnOn Time t V = 200V, I = 14A, R = 2.35 35 ns d(on) DD D G Rise Time t 190 ns r TurnOff Time t 170 ns d(off) Fall Time t 130 ns f Total Gate Charge Q V = 10V, I = 14A, V = 200V 52 110 nC g GS D DS GateSource Charge Q 5.0 18 nC gs GateDrain (Miller) Charge Q 25 65 nC gd Internal Drain Inductance L + L Measured between the contact screw on 6.1 nH S D header that is closer to source and gate pins and center of die. SourceDrain Diode Ratings and Characteristics: Continuous Source Current I 14 A S Pulse Source Current I Note 1 56 A SM Diode Forward Voltage V T = +25 C, I = 14A, V = 0V, Note 4 1.7 V SD J S GS Reverse Recovery Time t T = +25 C I = 14A, dl/dt 100A/ s, 1200 ns rr J , F V 50V, Note 4 DD Reverse Recovered Charge Q 250 c RR Forward Turnon Time t Intrinsic turnon time is negligible. Turnon speed is substantially on controlled by L + L . S D Note 1. Repetitive Rating Pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s, Duty Cycle 2%.