NTE2998 MOSFET PChannel, Enhancement Mode High Speed Switch (Compl to NTE2906) TO3 Type Package D Features: High Speed Switching High Voltage High Energy Rating G Enhancement Mode Integral Protection Diode S Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage, V ........................................................ 200V DSX GateSource Voltage, V ........................................................ 14V GSS Continuous Drain Current, I ......................................................... 8A D Body Drain Diode, I ............................................................. 8A D(PK) Total Power Dissipation (T = +25 C), P ........................................... 125W C D Maximum Operating Junction Temperature, T ...................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R ..................................... 1.0 C/W thJC Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage BV V = 10V, I = 10mA 200 V DSX GS D GateSource Breakdown Voltage BV V = 0, I = 100 A 14 V GSS DS G GateSource CutOff Voltage V V = 10V, I = 100mA 0.15 1.5 V GS(OFF) DS D DrainSource Saturation Voltage V V = 0, I = 8A, Note 1 12 V DS(SAT) GD D DrainSource CutOff Current I V = 10V, V = 200V 10 mA DSX GS DS Forward Transfer Admittance y V = 10V, I = 3A, Note 1 0.7 2.0 S fs DS D Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Input Capacitance C V = 10V, f = 1MHz 734 pF iss DS Output Capacitance C 300 pF oss Reverse Transfer Capacitance C 26 pF rss TurnOn Time t V = 20V, I = 5A 120 ns on DS D TurnOff Time t 60 ns off .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Drain 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Source/Case