NTE3032 Phototransistor Detector NPNSi, Visible & IR Description: The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications or any design requiring radiation sensitivity and stable characteristics. Features: Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application 2 Minimum Light Current: 8mH H = 5mW/cm External Base for Added Control Annular Passivated Structure for Stability and Reliability Popular TO18 Type Package for Easy Handling and Mounting Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V 30V CEO CollectorBase Voltage, V . 80V CBO EmitterCollector Voltage, V . 5V ECO Total Device Dissipation, P 150mW D Derate Above 25C 1.43mW/C Operating Junction Temperature Range, T 65 to +150C J Storage Temperature Range, T 65 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector Dark Current I V = 10V, H 0 100 nA CEO CC CollectorBase Breakdown Voltage V I = 100 A 80 V (BR)CBO C EmitterCollector Breakdown Voltage V I = 100 A 5 V (BR)ECO E Optical Characteristics Light Current I V = 5V, R = 100 , Note 1 8 mA L CC L Photo Current Rise Time t 15 s R = 100 , I = 1mA (Peak), r L L Note 2 Photo Current Fall Time t 15 s f 2 Note 1. Radiation flux density (H) equal to 5mW/cm emitted from a tungsten source at a color temperature of 2870 K. Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium arsenide) lightemitting diode ( m) with a pulse width equal to or greater than 10 s, I = 1mA Peak. L.210 (5.33) Dia .184 (4.67) Dia .120 (3.05) Dia Window on Center Line .240 (6.09) .150 (3.81) Die Seating Plane .021 (0.53) .500 (12.7) Min .018 (0.45) Dia Typ .040 (1.02) .100 (2.54) Dia 45 Collector Emitter Base