NTE491T MOSFET NCh, Enhancement Mode High Speed Switch TO237 Type Package Features: Zener Diode Input Protected D Low OnResistance Ultralow Threshold Low Input Characteristics Low Input and Output Leakage G Applications: Drivers: Relays, Solenoids, Lamps, Hammers, Displays, S Memories, Transistors, etc, Battery Operated Systems SolidState Relays Inductive Load Drivers Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DrainSource Voltage, V .......................................................... 60V DS GateSource Voltage, V ..................................................... 15/0.3V GS Drain Current, I D Continuous (T = +150 C) J T = +25 C ......................................................... 310mA A T = +100 C ........................................................ 200mA A Pulsed ....................................................................... 1A Power Dissipation, P D T = +25 C .................................................................. 1W A T = +100 C ............................................................. 400mW A Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toAmbient, R ................................ 125 C/W th (JA) Rev. 1213Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics DrainSource Breakdown Voltage V V = 0, I = 100 A 60 V (BR)DSS GS D Gate Threshold Voltage V I = 1mA, V = V 0.8 2.5 V GS(Th) D DS GS GateBody Leakage Current I V = 15V, V = 0 100 nA GSS GS DS ZeroGateVoltage Drain Current I V = 48V, V = 0 10 A DSS DS GS V = 48V, V = 0, T = +125 C 500 mA DS GS J ONState Drain Current I V = 10V, V = 10V, Note 1 750 mA d(on) GS DS DrainSource ON Resistance r V = 10V, I = 500mA 5.0 DS(on) GS D V = 10V, I = 500mA, T = +125 C 6.0 GS D J V = 5V, I = 200mA 7.5 GS D Forward Transconductance g V = 10V, I = 500mA 100 mS fs DS D Dynamic Characteristics Input Capacitance C 60 pF V = 25V, V = 0V, f = 1MH iss DS GS Z Output Capacitance C 25 pF oss Reverse Transfer Capacitance C 5 pF rss Switching Characteristics (Note 2) TurnOn Time t 10 ns V = 15V, R = 23 , I = 600mA, ON DD L D V = 10V, R = 25 GEN G TurnOff Time t 10 ns OFF Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. Switching time is essentially independent of operating temperature. .200 (5.08) .180 (4.57) .100 (2.54) .180 (4.57) S G D .594 (15.09) .018 (0.46) .015 (0.38) .050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R