Product Information

NTE492

NTE492 electronic component of NTE

Datasheet
Transistor: N-MOSFET; 200V; TO92

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

40: USD 4.0161 ea
Line Total: USD 160.64

0 - Global Stock
MOQ: 40  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 40
Multiples : 1

Stock Image

NTE492
NTE

40 : USD 4.0161
50 : USD 3.2426
100 : USD 1.2146
200 : USD 1.1254
500 : USD 1.0474

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

NTE492
NTE

1 : USD 2.9186
3 : USD 1.8166
14 : USD 1.7345

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
LoadingGif

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NTE492 MOSFET NCh, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: DrainSource Voltage, V ......................................................... 200V DS GateSource Voltage, V ......................................................... 20V GS Drain Current, I D Continuous (Note 1) ....................................................... 250mA Pulsed (Note 2) ........................................................... 500mA Total Device Dissipation (T = +25 C), P ......................................... 350mW A D Derate above 25 C ..................................................... 2.8mW/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Note 2. Pulse Width 300 s, Duty Cycle 2%. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics ZeroGateVoltage Drain Current I V = 130V, V = 0 30 nA DSS DS GS DrainSource Breakdown Voltage V V = 0, I = 100 A 200 V (BR)DSX GS D Gate Reverse Current I V = 15V, V = 0 0.01 10.0 nA GSS GS DS ON Characteristics (Note 2) Gate Threshold Voltage V I = 1mA, V = V 1.0 3.0 V GS(Th) D DS GS Static DrainSource ON Resistance r V = 10V, I = 100mA 4.5 6.0 DS(on) GS D V = 10V, I = 250mA 4.8 6.4 GS D SmallSignal Characteristics Input Capacitance C V = 25V, V = 0, f = 1MHz 60 pF iss DS GS Reverse Transfer Capacitance C V = 25V, V = 0, f = 1MHz 6.0 pF rss DS GS Output Capacitance C V = 25V, V = 0, f = 1MHz 30 pF oss DS GS Forward Transconductance g V = 25V, I = 250mA 200 400 mmhos fs DS D Note 2. Pulse Width 300 s, Duty Cycle 2%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Switching Characteristics TurnOn Time t 6.0 15.0 ns on TurnOff Time t 12 15 ns off D G S .135 (3.45) Min .210 (5.33) Seating Plane Max .500 .021 (0.45) Dia Max (12.7) Min DGS .100 (2.54) .050 (1.27) .156 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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