NTE5386 & NTE5387 Silicon Controlled Rectifier (SCR) for High Speed Switching, 700 Amp, TO200AC Maximum Ratings and Electrical Characteristics: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V , V DRM RRM NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak OffState Voltage, V DSM NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Non Repetitive Peak Reverse Blocking Voltage, V RSM NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V Average On State Current, I T(AV) (+55C heatsink temperature, double side cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 745A (+85C heatsink temperature, single side cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261A RMS On State Current (+25C heatsink temperature, double side cooled), I . . . . . . . 1535A T(RMS) Continuous On State Current (+25C heatsink temperature, double side cooled), I . . . . . . 1180A T Peak One Cycle Surge (Non Repetitive) On State Current, I TSM (t = 10ms, 60% V reapplied) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9500A RRM (t = 10ms, V 10V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10450A R 2 Maximum Permissible Surge Energy (V 10V), I t R 2 (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546000A sec 2 (t = 3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400000A sec Peak Forward Gate Current (Anode Positive with Respect to Cathode), I . . . . . . . . . . . . . . . 20A FGM Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), V . . . . . . . . . . . . . . 23V FGM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RGM Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W G(AV) Peak Gate Power (100s Pulse Width), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W GM Rate of Rise of OffState Voltage (To 80% V , Gate OpenCircuit), dv/dt . . . . . . . . . . . 200V/s DRM Rate of Rise of On State Current, di/dt (Gate Drive 20V, 20 with t 1s, Anode voltage 80% V ) r DRM Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/s Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/s Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Thermal Resistance, Junction toHeatsink, R thJHS Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.047C/W Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.094C/WMaximum Ratings and Electrical Characteristics (Contd): (T = +125C unless otherwise specified) J Peak OnState Voltage (I = 1500A), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9V TM TM Forward Conduction Threshold Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43V O Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.31m Repetitive Peak OffState Current (At Rated V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA DRM DRM Repetitive Peak Reverse Current (At Rated V ), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA RRM RRM Maximum Gate Current Required to Fire All Devices (T = +25C, V = 6V, I = 2A), I . . 300mA J A A GT Maximum Gate Voltage Required to Fire All Devices (T = +25C, V = 6V, I = 2A), V . . . . . 3V J A A GT Maximum Holding Current (T = +25C, V = 6V, I = 1A), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A J A A H Maximum Gate Voltage Which Will Not Trigger Any Device, V . . . . . . . . . . . . . . . . . . . . . . . 0.25V GD Typical Stored Charge (I = 800A, dir/dt 50A/s, V = 50V, 50% Chord Value), Q . . . . 150C TM RM rr Circuit Commutated Turn Off Time Available Down To, t q (I = 800A, dir/dt = 50A/s, V = 50V) TM RM Maximum (dv/dt = 200V/s to 80% V)2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 35s DRM Typical (dv/dt = 20V/s to 80% V)1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 30s DRM 8.500 (21.59) Max 2.290 (58.16) Max For No. 6 Screws Cathode Cathode Potential (Red) 1.343 (34.13) Max 1.060 (26.92) Gate (White) Max .040 (1.01) Min Marking Anode 2.090 (53.08) Max