NTE5498 & NTE5499 Silicon Controlled Rectifier (SCR) 12 Amp, TO220 Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Peak Repetitive OffState Voltage (T = 40 to +125C, R = 1k), V , V J GK DRM RRM NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (All Conduction Angles, T = +85C), I . . . . . . . . . . . . . . . . . . . . . 12A C T(RMS) Average OnState Current (Half Cycle, 180 Conduction Angle, T = +85C), I . . . . . . . . 7.6A C T(AV) Non Repetitive OnState Current (Half Cycle, 60Hz), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A TSM Non Repetitive OnState Current (Half Cycle, 50Hz), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A TSM 2 2 Circuit Fusing Considerations (Half Cycle, t = 10ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A s Peak Gate Current (10s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GM Peak Gate Dissipation (10s Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W GM Average Gate Dissipation (20ms Max), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T . . . . . . . . . . . . . . . +250C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OffState Leakage Current T = +125C 1.5 mA I , V + V , R = 1k DRM DRM RRM GK J I RRM T = +25C 5.0 A J OnState Voltage V I = 24A, T = +25C 1.8 V T T J OnState Threshold Voltage V T = +125C 1.0 V T(TO) J r T = +125C 36 m OnState Slope Resistance T J GateTrigger Current I V = 7V 5 10 mA GT D GateTrigger Voltage V V = 7V 2.0 V GT DElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Holding Current I R = 1k 40 mA H GK Latching Current I R = 1k 30 mA L GK Critical Rate of Voltage Rise dv/dt V = .67 x V , R = 1k, T = +125C 100 V/s D DRM GK J Critical Rate of Current Rise di/dt I = 50mA, di /dt = 0.5A/s, T = +125C 100 A/s G G J Gate Controlled Delay Time t I = 50mA, di /dt = 0.5A/s 500 ns gd G G Commutated Turn Off Time t V = .67 x V , V = 35V, I = I , 50 s q D DRM R T T(AV) T = +85C C .420 (10.67) Max .110 (2.79) Anode .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode Gate .100 (2.54) Anode