Product Information

NTE5557

NTE5557 electronic component of NTE

Datasheet
Hockey-puck thyristor; 1.6kV; 150mA; TO200AB

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 195.0743 ea
Line Total: USD 195.07

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 181.155
4 : USD 164.2815
10 : USD 155.52
25 : USD 147.6495

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 181.65

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5557 Silicon Controlled Rectifier (SCR) 820 Amp, TO200AB Applications: DC Motor Control DC Power Supplies AC Controller Absolute Maximum Ratings: (T = +125C unless otherwise specified) J Repetitive Peak Voltages, V , V .............................................. 1600V DRM RRM Average On State Current (T = +55C, 180, Half Sine Wave, 50Hz), I .............. 735A C T(AV) RMS OnState Current (T = +55C, Double Side Cooled), I ..................... 820A hs T(RMS) Continuous On State Current (T = +25C, Double Side Cooled), I ................... 1230A hs T Peak One Cycle Surge (10ms duration, Half Sine Wave, 50Hz), I ................... 6200A TSM Peak OnState Voltage (I = 1500A, T = +25C), V ................................ 2.0V TM J TM Repetitive Peak OffState Current (At V ), I ................................... 40mA DRM DRM Repetitive Peak Reverse Current (At V ), I .................................... 40mA RRM RRM Maximum Gate Current (V = 12V, I = 1A, T = +25C), I .......................... 200mA A A J GT Maximum Gate Voltage (V = 12V, I = 1A, T = +25C), V ............................. 3V A A J GT Rate of Rise of OffState Voltage (V = 1072V), dv/dt ............................ 500V/s DRM Operating Junction Temperature, TJ ............................................... +125C Storage Temperature Range, T .......................................... 40 to +125C stg Thermal Resistance, Junction toCase, R .................................... 0.05C/W thJC Rev. 1211.190 (4.8) 25 1.650 (42.0) Dia 1.102 (28.0) .140 x .075 (3.5 x 1.8) Dia (2 Holes) .990 .012 Cathode (0.3) (25.1) Dia .590 (15.0) Gate Terminal Anode .990 (25.1) Dia

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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