NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) 80 Amp (I ), TO65 (TO208AC) T(RMS) Features: High Current Rating Excellent Dynamic Characteristics Superior Surge Capabilities Standard Package Voltage Ratings and Electrical Characteristics: (T = +125C unless otherwise specified) J Parameter Symbol Test Conditions Values Unit Maximum Repetitive Peak Forward & Reverse Voltage V Note 1 DRM, NTE5567 V RRM 200 V NTE5568 600 V NTE5569 1200 V NTE5571 1600 V Maximum NonRepetitive Peak Voltage V Note 2 RSM NTE5567 300 V NTE5568 700 V NTE5569 1300 V NTE5571 1700 V Peak Reverse & OffState Current I , I 15 mA DRM RRM Average OnState Current I T(AV) NTE5567, NTE5568, NTE5569 T = +94C 180 Sinusoidal C 50 A Conduction NTE5571 T = +90C 50 A C RMS OnState Current I 80 A T(RMS) Peak OneCycle NonRepetitive Surge Current I TSM NTE5567, NTE5568, NTE5569 t = 10ms, No Voltage Reapplied, 50 A Sinusoidal Half Wave NTE5571 50 A 2 2 I t for Fusing I t 2 NTE5567, NTE5568, NTE5569 t = 10ms, No Voltage 10.18 KA s Sinusoidal Half Wave Reapplied 2 NTE5571 7.21 KA s 2 NTE5567, NTE5568, NTE5569 100% V 7.20 KA s RRM Reapplied 2 NTE5571 5.10 KA s Note 1. Units may be broken over nonrepetitively in the offstate direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with t 5ms. p Rev. 1018Voltage Ratings and Electrical Characteristics (Contd): (T = +125C unless otherwise specified) J Parameter Symbol Test Conditions Values Unit 2 2 I t for Fusing I t 2 NTE5567, NTE5568, NTE5569 t = 0.1 to 10ms, 10.18 KA s No Voltage Reapplied 2 NTE5571 7.21 KA s Low Level Value of Threshold Voltage I T(TO) NTE5567, NTE5568, NTE5569 16.7% x x I < I < x I T(AV) T(AV) 0.94 V NTE5571 1.02 V High Level Value of Threshold Voltage I T(TO)2 NTE5567, NTE5568, NTE5569 x I < I < 20 x x I 1.08 V T(AV) T(AV) NTE5571 1.17 V Low Level Value of OnState Slope Resistance r T1 NTE5567, NTE5568, NTE5569 16.7% x x I < I <20 x x I 4.08 m T(AV) T(AV) NTE5571 4.78 m High Level Value of OnState Slope Resistance r T2 NTE5567, NTE5568, NTE5569 x I < I < 20 x x I 3.34 m T(AV) T(AV) NTE5571 3.97 m Maximum OnState Voltage V TM NTE5567, NTE5568, NTE5569 I = 157A, T = +25C 1.60 V pk J NTE5571 1.78 V Maximum Holding Current I 200 mA T = +25C, Anode Supply 22V, H J Resistive Load, Initial I = 2A T Latching Current I Anode Supply 6V, Resistive Load 400 mA L Maximum Rate of Rise of TurnedOn Current di/dt NTE5567, NTE5568, V = Rated V , Gate Pulse = 20V, DM DRM 200 A/s 15, t = 6s, t = 0.1s Max, p r NTE5569, NTE5571 100 A/s I = (2 x Rated di/dt) A TM Typical Delay Time t T = +25C, V = Rated V , DC 0.9 s d C DM DRM Resistive Circuit, Gate Pulse = 10V, 15 Source, t = 20s p Typical TurnOff Time t T = +125C, I = 50A, Reapplied 110 s q C TM dv/dt = 20V/s, dir/dt = 10A/s, V = 50V R Linear to 100% Rated V 200 V/s Maximum Critical Rate of Rise of dv/dt DRM OffState Voltage Linear to 67% Rated V 500 V/s DRM Maximum Peak Gate Power P t 5ms 10 W G(AV) p Maximum Average Gate Power P 2.5 W GM Maximum Peak Positive Gate Current I 2.5 A GM Maximum Peak Positive Gate Voltage +V 10 V GM Maximum Peak Negative Gate Voltage V 10 V GM DC Gate Current Required to Trigger I 6V, AnodetoCathode Applied 100 mA GT DC Gate Voltage Required to Trigger V 6V, AnodetoCathode Applied, 2.5 V GT T = +25C J DC Gate Current Not to Trigger I Rated V , AnodetoCathode 5.0 mA GD DRM Applied Note 1. Units may be broken over nonrepetitively in the offstate direction without damage, if di/dt does not exceed 20A/s. Note 2. For voltage pulses with t 5ms. p