Product Information

NTE5585

NTE5585 electronic component of NTE

Datasheet
Stud thyristor; 1.6kV; 275A; 150mA; TO93

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 253.9575 ea
Line Total: USD 253.96

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 253.9575
10 : USD 206.8956
25 : USD 193.104
50 : USD 181.0404

0 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 268.0873

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5580 thru NTE5585 Silicon Controlled Rectifier (SCR) 275 Amp, TO93 Features: Center Fired Gate All Diffused Design Low Gate Current Low Thermal Impedance High Surge Electrical Characteristics: Repetitive Peak OffState and Reverse Voltage, V & V DRM RRM NTE5580 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5582 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5584 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V NTE5585 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Maximum RMS OnState Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275A T(RMS) Maximum Average On State Current, I T(AV) T = +88C, 180 conduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A C T = +80C, 3 phase conduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135A C Maximum Peak One Cycle, Non Repetitive Surge Current, I TSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3200A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3500A 2 2 2 Maximum I t for Fusing (1.5msec), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32,000A sec Peak On State Voltage (T = +25C, 180 conduction, Rated I ), V . . . . . . . . . . . . . . . . . 1.7V J T(AV) TM Maximum Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.14C/W thJC Typical TurnOff Time (T = 125C), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250s J q Rate ofRise of TurnedOn Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/s Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Maximum Reverse Recovered Charge (T = +25C), Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200c J RR Maximum Critical Rate ofRise of OffState Voltage, dV/dt Exponential Max. Rated T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/s J Maximum Required Gate Current to Trigger, I GT T = 40C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA J T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA J Maximum Required Gate Voltage to Trigger (T = 40 to +125C), V . . . . . . . . . . . . . . . . . . . . 3V J GT Peak On State Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1 F Maximum Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 InLbs (33.9 NM) Note 1. V = A + B L (I) + C I + DI F N Where: I = 10A MIN I = 3000A MAX A = .523 B = .022 C = .0005 D = .0381.443 (36.68) Max (Across Corners) 1.031 (26.18) Dia (Ceramic) .643 (16.35) For No. 6 Screw For No. 6 Screw .350 (8.89) Cathode Dia Max Gate (White) Cathode 8.100 (Red) (205.74) Max (Terminals 3.625 1, 2, & 3) (92.07) Max 1.212 (30.8) Dia Max .156 (3.96) Max .630 (16.0) 3/416 UNF2A (Terminal 4) Anode 1.077 (27.35) Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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