Product Information

NTE5587

NTE5587 electronic component of NTE

Datasheet
Stud thyristor; 600V; 550A; 150mA; TO118

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 255.6563 ea
Line Total: USD 255.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 255.6563
10 : USD 208.2888
25 : USD 194.4
50 : USD 182.25

0 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 269.892

     
Manufacturer
Product Category
Case
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE5587, NTE5589, NTE5593 Silicon Controlled Rectifier (SCR) 550 Amp, TO118 Features: Low On State Voltage High di/dt High dv/dt 2 Excellent Surge and I t Ratings Applications: Power Supplies Battery Chargers Motor Controls Absolute Maximum Ratingsand Electrical Characteristics: Repetitive Peak Voltages, V & V DRM RRM NTE5587 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5589 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V NTE5593 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V RMS On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550A T(RMS) Average On State Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350A T(AV) Peak One Cycle, Non Repetitive On State Surge Current, I TSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9100A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10,000A Critical Rate ofRise of OnState Current, di/dt Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A/s Non Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800A/s 2 2 2 I t fo Fusing (8.2ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416,000A sec Peak Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16W GM Average Gate Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W G(AV) Peak On State Voltage (I = 625A, T = +25C), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V TM J TM Peak Forward Leakage Current (At V , T = +125C), I . . . . . . . . . . . . . . . . . . . . . . . . . 30mA DRM J DRM Peak Reverse Leakage Current (At V , T = +125C), I . . . . . . . . . . . . . . . . . . . . . . . . . 30mA RRM J RRM Gate Current to Trigger (V = 12V, T = +25C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA D J GT Gate Voltage to Trigger (V = 12V, T = +25C), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V D J GT Non Triggering Gate Voltage (At V , T = +125C), V . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.15V DRM J GDMAbsolute Maximum Ratingsand Electrical Characteristics (Contd): Peak Forward Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A GTM Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GRM Typical TurnOff Time, t q (I = 250A, di /dt = 25A/s, reapplied, dv/dt = 20V/s, linear to 0.8V , T = +125C) 150s T R DRM J Typical TurnOn Time (V = 100V, I = 100A), t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7s D T on Minimum Critical dv/dt exponential to V (T = +125C), dv/dt . . . . . . . . . . . . . . . . . . . . . 300V/s DRM J Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +150C stg Maximum Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.10C/W thJC Maximum Thermal Resistance, Case toSink (Lubricated), R . . . . . . . . . . . . . . . . . . . 0.05C/W thCS Mounting Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360in.lb. Mounting Torque (Lubricated) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400kgcm 1.750 (44.45) Across Flats .146 (3.71) Dia (2 Holes) .730 (18.5) Cathode Potential (Red) .343 (8.71) Dia Gate (White) 9.660 (245.4) Cathode (Red) 10.06 (255.5) 2.740 (69.6) 1.410 (35.8) .780 (19.8) 3/4 16 UNF2A (Terminal 4) Anode 1.060 (26.9)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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