Product Information

NTE56020

NTE56020 electronic component of NTE

Datasheet
Triac; 400V; 25A; 80mA; THT; tube; TO220ISO

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 14.238 ea
Line Total: USD 42.71

9 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1
5 : USD 12.0375
25 : USD 9.575
50 : USD 9.425
100 : USD 9.2875
250 : USD 8.525
500 : USD 8.4
1000 : USD 8.2625
2500 : USD 7.875

     
Manufacturer
Product Category
Case
Mounting
Kind Of Package
Type Of Semiconductor Component
Max Load Current
Max Off-State Voltage
Gate Current
LoadingGif

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NTE56019 thru NTE56021 TRIAC, 25 Amp Description: The NTE56019, NTE56020 and NTE56021 are 25 Amp TRIACs with a repetitive peak blocking of 200V, 400V and 800V respectively. These devices may be gate triggered from a blocking to con- duction state for either polarity of applied voltage and are designed for AC switching and phase con- trol applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the Gate and MT . 1 Features: Electrically Isolated TO220 Type Package GlassPassivated Junctions Surge Capability: Up to 400A Absolute Maximum Ratings: (T = +25 C, 60Hz, with a resistive load unless otherwise specified) A Repetitive Peak Blocking Voltage (Note 1), V DRM NTE56019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE56020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE56021 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS OnState Current (Conduction Angle of 360 , T = 40 to +125C), I . . . . . . . . . . 25A C T(RMS) Non Repetitive OnState Current (One Cycle), I TSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208A 2 2 Fusing Current (t = 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259A s Peak Gate Current (Pulse Width 10s Max), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Gate Dissipation (Pulse Width 10s, I I ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W GT GTM GM Gate Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW G(AV) Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5K/W thJC Thermal Resistance, Junction toAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJA Lead Temperature (During Soldering, 1/16 from case, 10sec max), T . . . . . . . . . . . . . . . . . +230 C L Note 1. For either polarity of MT with reference to MT terminal. 2 1 Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OffState Leakage Current I V = V , T = +25C, Note 1 0.1 mA DRM D DRM J V = V , T = +125C, Note 1 3 mA D DRM J OnState Voltage V I = 25A, Note 1 1.8 V TM T(RMS) Note 1. For either polarity of MT with reference to MT terminal. 2 1Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current I V = 12V, T = 40 to +125C 80 mA GT D C Gate Trigger Voltage V V = 12V, Quadrants I, II, and III, Note 2 2.5 V GT D Holding Current I Gate Open, Note 1, Note 3 100 mA H Gate Controlled TurnOn Time t I = 500mA, 0.1s Rise Time 4 s gt GT Critical RateofRise dv/dt V = V , Gate Open, T = +125C, Note 1 250 V/s D DRM C Critical RateofRise, OffState dv/dt V = V , I = 25A, di/dt = 13.5A/ms, 5 V/s c D DRM T Gate Unenergized, Note 1 Note 1. For either polarity of MT with reference to MT terminal. 2 1 Note 2. For either polarity of gate voltage with reference to electrode MT . 1 Note 3. Initial OnState Current = 400mA (DC). .420 (10.67) Max .110 (2.79) Isolated .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT Gate 1 .100 (2.54) MT 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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