NTE2380 NTE

NTE2380 (NCh) & NTE2381 (PCh) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch TO220 Type Package Description: The NTE2380 (NCh) and NTE2381 (PCh) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regu- lators, converters, solenoid, and relay drivers. Features: Silicon Gate for Fast Switching Speeds Rugged SOA is Power Dissipation Limited Source toDrain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: DrainSource Voltage, V ........................................................ 500V DSS DrainGate Voltage (R = 1M), V ............................................. 500V GS DGR GateSource Voltage, V GS NTE2380 ................................................................... 20V NTE2381 ................................................................... 30V Drain Current, I D Continuous NTE2380 ................................................................ 2.5A NTE2381 ................................................................ 2.7A Pulsed NTE2380 ................................................................. 10A NTE2381 ............................................................... 10.8A Total Power Dissipation (T = +25C), P C D NTE2380 ................................................................... 40W Derate Above 25 C ................................................... 0.32W/ C NTE2381 ................................................................... 85W Derate Above 25 C ................................................... 0.68W/ C Operating Temperature Range, T opr NTE2380 .......................................................... 55 to +150C NTE2381 .......................................................... 65 to +150C Storage Temperature Range, T stg NTE2380 .......................................................... 55 to +150C NTE2381 .......................................................... 65 to +150C Thermal Resistance, Junction toAmbient, R .................................. 62.5 C/W thJA Thermal Resistance, Junction toCase, R thJC NTE2380 ............................................................... 3.12 C/W NTE2381 ................................................................ 2.4 C/W Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Rev. 116Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0, I = 0.25mA 500 V (BR)DSS GS D Zero Gate Voltage Drain Current I DSS NTE2380 V = 500V, V = 0 0.25 mA DS GS NTE2381 1 A NTE2380 V = 400V, V = 0, T = +125C 1.0 mA DS GS J NTE2381 10 A GateBody Leakage Current, Forward I GSSF NTE2380 V = 20V, V = 0 500 nA GSF DS NTE2381 V = 30V, V = 0 100 nA GSF DS GateBody Leakage Current, Reverse I GSSR NTE2380 V = 20V, V = 0 500 nA GSF DS NTE2381 V = 30V, V = 0 100 nA GSF DS ON Characteristics (Note 1) Gate Threshold Voltage V GS(th) NTE2380 V = V , I = 0.25mA 2.0 4.0 V DS GS D NTE2381 3.0 5.0 V Static DrainSource OnResistance r DS(on) NTE2380 V = 10V, I = 1A 3 GS D NTE2381 V = 10V, I = 1.35A 3.9 4.9 GS D Forward Transconductance g FS NTE2380 V 7.5V, I = 1A 1 mhos DS D NTE2381 V = 50V, I = 1.35A 2.35 mhos DS D Dynamic Characteristics Input Capacitance C iss NTE2380 V = 25V, V = 0, f = 1MHz 400 pF DS GS NTE2381 510 660 pF Output Capacitance C oss NTE2380 150 pF NTE2381 70 90 pF Reverse Transfer Capacitance C rss NTE2380 40 pF NTE2381 9.5 12 pF Switching Characteristics (Note 1) TurnOn Time NTE2380 V 200V, I = 1A, R = 50 t 60 ns DD D gen d(on) NTE2381 V = 250V, I = 2.7A, R = 25 12 35 ns DD D gen Rise Time NTE2380 V 200V, I = 1A, R = 50 t 50 ns DD D gen r NTE2381 V = 250V, I = 2.7A, R = 25 56 120 ns DD D gen TurnOff Time NTE2380 t V 200V, I = 1A, R = 50 60 ns d(off) DD D gen NTE2381 V = 250V, I = 2.7A, R = 25 35 80 ns DD D gen Fall Time NTE2380 V 200V, I = 1A, R = 50 t 30 ns f DD D gen NTE2381 V = 250V, I = 2.7A, R = 25 45 100 ns DD D gen Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.