NTE56039 NTE

NTE56039 TRIAC, 4A Sensitive Gate Description: The NTE56039 is a glass passivated TRIAC in a plastic SOT82 type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Absolute Maximum Ratings: Repetitive Peak OffSate Voltage (Note 1), V ..................................... 600V DRM RMS OnState Current (Full Sine Wave, T 107C), I (RMS) .......................... 4A MB T Non Repetitive Peak OnState Current (Full Sine Wave, T = +25C prior to Surge), I J TSM t = 20ms .................................................................... 25A t = 16.7ms ................................................................... 27A 2 2 2 I t for Fusing (t = 10ms), I t ..................................................... 3.1A sec Repetitive RateofRise of OnState Current after Triggering, dI /dt T (I = 6A, I = 0.2A, dI /dt = 0.2A/s) TM G G MT (+), G (+) ......................................................... 50A/s 2 MT (+), G () ......................................................... 50A/s 2 MT (), G () .......................................................... 50A/s 2 MT (), G (+) ......................................................... 10A/s 2 Peak Gate Current, I .............................................................. 2A GM Peak Gate Voltage, V ............................................................. 5V GM Peak Gate Power, P ............................................................. 5W GM Average Gate Power (Over Any 20ms Period), P ............................... 500mW G(AV) Operating Junction Temperature, T ............................................... +125C J Storage Temperature Range, T .......................................... 40 to +150C stg Thermal Resistance, Junction toMounting Base, R thJMB Full Cycle ................................................................ 3.0K/W Half Cycle ................................................................ 3.7K/W Typical Thermal Resistance, Junction toAmbient, R ............................ 100K/W thJA Note 1. Although not recommended, offstate voltages up to 800V may be applied without damage, but the TRIAC may switch to the On State. The rateofrise of current should not exceed 3A/s. Rev. 812Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Gate Trigger Current MT (+), G (+) I V = 12V, I = 0.1A 2.5 10 mA 2 GT D T MT (+), G () 4.0 10 mA 2 MT (), G () 5.0 10 mA 2 MT (), G (+) 11.0 25 mA 2 Latching Current MT (+), G (+) I V = 12V, I = 0.1A 3.0 15 mA 2 L D T MT (+), G () 10 20 mA 2 MT (), G () 2.5 15 mA 2 MT (), G (+) 4.0 20 mA 2 Holding Current I V = 12V, I = 0.1A 2.2 15 mA H D T OnState Voltage V I = 5A 1.4 1.7 V T T Gate Trigger Voltage V V = 12V, I = 0.1A 0.7 1.5 V GT D T V = 400V, I = 0.1A, T = +125C 0.25 0.4 V D T J OffState Leakage Current I V = 600V, T = +125C 0.1 0.5 mA D D J Dynamic Characteristics Critical RateofRise of dV /dt V = 402V, T = +125C, 50 V/s D DM J OffState Voltage Exponential Waveform, Gate Open Gate Controlled TurnOn Time t I = 6A, V = 600V, I = 0.1A, 2 s gt TM D G dI /dt = 5A/s G .307 (7.8) .100 (2.54) Max See .147 Note (3.75) .118 (3.0) Min .437 (11.1) Max MT MT G 1 2 .100 (2.54) .602 (15.3) Min .090 (2.29) .047 (1.2) Note: Center Pin connected to metal part of mounting surface.