NTE5621 thru NTE5627 TRIAC 10 Amp Description: The NTE5621 through NTE5627 TRIACs are designed primarily for fullwave AC control applica- tions, such as light dimmers, motor controls, heating controls, and power supplies or wherever full wave silicon gate controlled solidstate devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features: All Diffused and Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability. Gate Triggering Guaranteed in Two Modes Absolute Maximum Ratings: Repetitive Peak OffState Voltage (T = +100C, Note 2), V J DRM NTE5621 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V NTE5622 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V NTE5623 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V NTE5627 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V OnState Current RMS (T = +75C), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C T(RMS) Peak Surge Current (One Full Cycle, 60Hz, T = 40 to +100C), I 100A. . . . . . . . . . . . . . . . . . J TSM 2 2 Circuit Fusing Considerations (T = 40 to +100C, t = 1.0 to 8.3ms), I t . . . . . . . . . . . . . . . . 40A s J Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W GM Average Gate Power, P 0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . G(AV) Peak Gate Current, I 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GM Operating Junction Temperature Range, T 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +100C J Storage Temperature Range, T 40. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Mounting Torque (632 Screw, Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12in. lb. Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W thJC Thermal Resistance, CasetoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W thJA Note 1. NTE5622 and NTE5627 are discontinued devices and no longer available. Note 2. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated block- ing voltage. Note 3. Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower casetosink thermal resistance. Anode lead and heatsink contact pad are common. Note 4. For soldering purposes (either terminal connection or device mounting), soldering tempera- tures shall not exceed +230C.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Min Typ Max Unit Peak Blocking Current (Either Direction) I mA DRM (Rated V , T = 100C, Gate Open) DRM J 2 OnState Voltage (Either Direction) V V TM (I = 14A Peak) 1.3 1.8 TM Gate Trigger Current (Continuous DC) I mA GT (Main Terminal Voltage = 12V, R = 100 ) L MT (+), G (+) MT (), G () 50 2 2 Gate Trigger Voltage (Continuous DC) V V GT (Main Terminal Voltage = 12V, R = 100 ) L MT (+), G (+) MT (), G () 0.9 2.0 2 2 Gate Trigger Voltage (Continuous DC All Modes) V V GD (Main Terminal Voltage = Rated V , R = 100 , T = +100C) 0.2 DRM L J Holding Current (Either Direction) I mA H (Main Terminal Voltage = 12Vdc, Gate Open, I = 100mA) 50 T TurnOn Time t s on (I = 14A, I = 100mA) 1.5 TM GT Blocking Voltage Application Rate at Commutation dv/dt V/ s (At V , T = +75C, Gate Open) 5 DRM J .530 (13.4) Max .143 (3.65) Dia Thru .668 (17.0) Max MT Gate 1 .655 (16.6) Max Heat Sink Contact MT (Heat Sink Area) 2 Area (Bottom) .150 (3.82) Max .166 (4.23)